BC847BDW1T1G Datasheet SBC847BDW1T1G, SBC847CDW1T1G, BC846BDW1T1G | P7-P9

BC846BDW1, BC847BDW1, BC848CDW1

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7

TYPICAL CHARACTERISTICS − BC848CDW1

0

100

200

300

400

500

600

700

800

900

1000

0.0001 0.001 0.01 0.1 1

I

C

, COLLECTOR CURRENT (A)

h

FE

, DC CURRENT GAIN

Figure 23. DC Current Gain at V

CE

= 5 V

V

CE

= 5 V

150°C

25°C

−55°C

0

100

200

300

400

500

600

700

800

900

1000

0.0001 0.001 0.01 0.1

1

V

CE

= 10 V150°C

25°C

−55°C

I

C

, COLLECTOR CURRENT (A)

h

FE

, DC CURRENT GAIN

Figure 24. DC Current Gain at V

CE

= 10 V

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

0.0001 0.001 0.01 0.1

V

CE(sat)

, COLL−EMITT SATURATION VOLTAGE (V)

I

C

, COLLECTOR CURRENT (A)

Figure 25. V

CE

at I

C

/I

B

= 10

150°C

25°C

−55°C

I

C

/I

B

= 10

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.0001 0.001 0.01 0

.1

V

CE(sat)

, COLL−EMITT SATURATION VOLTAGE (V)

I

C

, COLLECTOR CURRENT (A)

Figure 26. V

CE

at I

C

/I

B

= 20

I

C

/I

B

= 20

150°C

−55°C

25°C

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0.0001 0.001 0.01 0.1

V

BE(sat)

, BASE−EMITT SATURATION VOLTAGE (V)

I

C

, COLLECTOR CURRENT (A)

Figure 27. V

BE(sat)

at I

C

/I

B

= 10

I

C

/I

B

= 10

150°C

25°C

−55°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0001 0.001 0.01 0

.1

V

BE(sat)

, BASE−EMITT SATURATION VOLTAGE (V)

I

C

, COLLECTOR CURRENT (A)

Figure 28. V

BE(sat)

at I

C

/I

B

= 20

I

C

/I

B

= 20

150°C

25°C

−55°C

BC846BDW1, BC847BDW1, BC848CDW1

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8

TYPICAL CHARACTERISTICS − BC848CDW1

0

0.4

0.8

1.2

1.6

2

0.01 0.1 1 10 10

0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0001 0.001 0.01 0.1

I

C

, COLLECTOR CURRENT (A)

V

BE(on)

, BASE−EMITTER VOLTAGE

(V)

Figure 29. V

BE(on)

at V

CE

= 5 V

V

CE

= 5 V

150°C

25°C

−55°C

10

100

1000

0.1 1 10 10

0

I

C

, COLLECTOR CURRENT (mA)

Figure 30. Current − Gain − Bandwidth

Product

f

T

, CURRENT−GAIN − BANDWIDTH

PRODUCT

V

CE

= 10 V

T

A

= 25°C

1

10

0.1 1 10 100

C, CAPACITANCE (pF)

V

R

, REVERSE VOLTAGE (V)

Figure 31. Capacitances

C

ob

C

ib

T

A

= 25°C

I

C

=

10 mA

I

C

=

20 mA

I

C

=

50 mA

I

C

=

100 mA

T

A

= 25°C

V

CE

, COLLECTOR−EMITTER VOLT-

AGE (V)

I

B

, BASE CURRENT (mA)

Figure 32. Collector Saturation Region

0.1 1 10 100

I

B

, BASE CURRENT (mA)

Figure 33. Base−Emitter Temperature Coefficient

−0.2

−0.6

−1

−1.4

−1.8

−2.2

−2.6

−3

q

VB

, TEMPERATURE COEFFICIENT

(mV/°C)

−55°C to 150°C

q

VB

, for V

BE

V

CE

= 5 V

BC846BDW1, BC847BDW1, BC848CDW1

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9

Figure 34. Thermal Response

t, TIME (ms)

1.0

r(t), TRANSIENT THERMAL

1.00

RESISTANCE (NORMALIZED)

0.1

0.01

0.001

10 100 1.0k 10k 100k

Figure 35. Active Region Safe Operating Area

V

CE

, COLLECTOR-EMITTER VOLTAGE (V)

-200

-1.0

I

C

, COLLECTOR CURRENT (mA)

T

A

= 25°C

D = 0.5

0.2

0.1

0.05

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

T

J

= 25°C

Z

q

JA

(t) = r(t) R

q

JA

R

q

JA

= 3285C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

T

J(pk)

− T

C

= P

(pk)

R

q

JC

(t)

t

1

t

2

P

(pk)

DUTY CYCLE, D = t

1

/t

2

-100

-50

-10

-5.0

-2.0

-5.0 -10 -30 -45 -65 -100

1 s

BC558

BC557

BC556

The safe operating area curves indicate I

C

−V

CE

limits

of the transistor that must be observed for reliable

operation. Collector load lines for specific circuits must

fall below the limits indicated by the applicable curve.

The data of Figure 35 is based upon T

J(pk)

= 150°C; T

C

or T

A

is variable depending upon conditions. Pulse

curves are valid for duty cycles to 10% provided T

J(pk)

≤

150°C. T

J(pk)

may be calculated from the data in

Figure 34. At high case or ambient temperatures,

thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by the

secondary breakdown.

1.0M

0.02

0.01

BC847BDW1T1G

BC847BDW1T1G

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