BC847BDW1T1G

P1-P3 P4-P6 P7-P9 P10-P11

BC846BDW1, BC847BDW1, BC848CDW1

www.onsemi.com

4

TYPICAL CHARACTERISTICS − BC846BDW1

0.20

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

1.10

1.20

0.0001 0.001 0.01 0.1

I

C

, COLLECTOR CURRENT (A)

V

BE(on)

, BASE−EMITTER VOLTAGE

(V)

Figure 7. V

BE(on)

at V

CE

= 5 V

150°C

25°C

−55°C

V

CE

= 5 V

10

100

1000

0.1 1 10 10

0

I

C

, COLLECTOR CURRENT (mA)

Figure 8. Current − Gain − Bandwidth Product

f

T

, CURRENT−GAIN − BANDWIDTH

PRODUCT

V

CE

= 10 V

T

A

= 25°C

1

10

0.1 1 10 100

C, CAPACITANCE (pF)

V

R

, REVERSE VOLTAGE (V)

Figure 9. Capacitances

C

ob

C

ib

T

A

= 25°C

I

C

=

20 mA

I

C

=

50 mA

I

C

=

100 mA

T

A

= 25°C

V

CE

, COLLECTOR−EMITTER VOLT-

AGE (V)

I

B

, BASE CURRENT (mA)

Figure 10. Collector Saturation Region

I

C

=

10 mA

0.1 1 10 100

I

B

, BASE CURRENT (mA)

Figure 11. Base−Emitter Temperature Coefficient

q

VB

, TEMPERATURE COEFFICIENT

(mV/°C)

−55°C to 150°C

q

VB

, for V

BE

−0.2

−0.6

−1

−1.4

−1.8

−2.2

−2.6

−3

0

0.4

0.8

1.2

1.6

2

0.01 0.1 1 10 10

0

V

CE

= 5 V

BC846BDW1, BC847BDW1, BC848CDW1

www.onsemi.com

5

TYPICAL CHARACTERISTICS − BC847BDW1

0

100

200

300

400

500

600

0.0001 0.001 0.01 0.1 1

I

C

, COLLECTOR CURRENT (A)

h

FE

, DC CURRENT GAIN

Figure 12. DC Current Gain at V

CE

= 5 V

V

CE

= 5 V

150°C

25°C

−55°C

0

100

200

300

400

500

600

0.0001 0.001 0.01 0.1

1

V

CE

= 10 V

150°C

25°C

−55°C

I

C

, COLLECTOR CURRENT (A)

h

FE

, DC CURRENT GAIN

Figure 13. DC Current Gain at V

CE

= 10 V

0.00

0.05

0.10

0.15

0.20

0.25

0.0001 0.001 0.01 0.1

V

CE(sat)

, COLL−EMITT SATURATION VOLTAGE (V)

I

C

, COLLECTOR CURRENT (A)

Figure 14. V

CE

at I

C

/I

B

= 10

150°C

25°C

−55°C

I

C

/I

B

= 10

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.0001 0.001 0.01 0

.1

V

CE(sat)

, COLL−EMITT SATURATION VOLTAGE (V)

I

C

, COLLECTOR CURRENT (A)

Figure 15. V

CE

at I

C

/I

B

= 20

I

C

/I

B

= 20

150°C

−55°C

25°C

0.00

0.20

0.40

0.60

0.80

1.00

1.20

0.0001 0.001 0.01 0.1

V

BE(sat)

, BASE−EMITT SATURATION VOLTAGE (V)

I

C

/I

B

= 10

150°C

25°C

−55°C

I

C

, COLLECTOR CURRENT (A)

Figure 16. V

BE(sat)

at I

C

/I

B

= 10

0.00

0.20

0.40

0.60

0.80

1.00

1.20

0.0001 0.001 0.01 0

.1

V

BE(sat)

, BASE−EMITT SATURATION VOLTAGE (V)

I

C

, COLLECTOR CURRENT (A)

Figure 17. V

BE(sat)

at I

C

/I

B

= 20

I

C

/I

B

= 20

150°C

25°C

−55°C

BC846BDW1, BC847BDW1, BC848CDW1

www.onsemi.com

6

TYPICAL CHARACTERISTICS − BC847BDW1

0.20

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

1.10

1.20

0.0001 0.001 0.01 0.1

I

C

, COLLECTOR CURRENT (A)

V

BE(on)

, BASE−EMITTER VOLTAGE

(V)

Figure 18. V

BE(on)

at V

CE

= 5 V

V

CE

= 5 V

150°C

25°C

−55°C

10

100

1000

0.1 1 10 10

0

I

C

, COLLECTOR CURRENT (mA)

Figure 19. Current − Gain − Bandwidth

Product

f

T

, CURRENT−GAIN − BANDWIDTH

PRODUCT

V

CE

= 10 V

T

A

= 25°C

1

10

0.1 1 10 100

C, CAPACITANCE (pF)

V

R

, REVERSE VOLTAGE (V)

Figure 20. Capacitances

C

ob

C

ib

T

A

= 25°C

0

0.4

0.8

1.2

1.6

2

0.01 0.1 1 10 10

0

I

C

=

20 mA

I

C

=

50 mA

I

C

=

100 mA

T

A

= 25°C

V

CE

, COLLECTOR−EMITTER VOLT-

AGE (V)

I

B

, BASE CURRENT (mA)

Figure 21. Collector Saturation Region

I

C

=

10 mA

0.1 1 10 100

I

B

, BASE CURRENT (mA)

Figure 22. Base−Emitter Temperature Coefficient

q

VB

, TEMPERATURE COEFFICIENT

(mV/°C)

−55°C to 150°C

q

VB

, for V

BE

−0.2

−0.6

−1

−1.4

−1.8

−2.2

−2.6

−3

V

CE

= 5 V

P1-P3 P4-P6 P7-P9 P10-P11

BC847BDW1T1G

Mfr. #:

Buy BC847BDW1T1G

Manufacturer:

ON Semiconductor

Description:

Bipolar Transistors - BJT 100mA 50V Dual NPN

Lifecycle:

New from this manufacturer.

Delivery:

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