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APT40GR120B2D30

P1-P3P4-P6P7-P8
052-6401 Rev A 4-2012
APT40GR120B2D30
Symbol Parameter Ratings Unit
V
ces
Collector Emitter Voltage 1200
V
V
GE
Gate-Emitter Voltage ±30
I
C1
Continuous Collector Current
@ T
C
= 25°C 88
AI
C2
Continuous Collector Current @ T
C
= 100°C 40
I
CM
Pulsed Collector Current
1
160
SCWT Short Circuit Withstand Time: V
CE
= 600V, V
GE
= 15V, T
C
=125°C 10 s
P
D
Total Power Dissipation @ T
C
= 25°C 500 W
T
J
,T
STG
Operating and Storage Junction Temperature Range -55 to 150
°C
T
L
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
STATIC ELECTRICAL CHARACTERISTICS
APT40GR120B2D30
1200V, 40A, V
CE(on)
= 2.5V Typical
Microsemi Website - http://www.microsemi.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Symbol Parameter Min Typ Max Unit
V
(BR)CES
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA) 1200
Volts
V
GE(TH)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 2.0mA, T
j
= 25°C) 3 4.5 6.0
V
CE(ON)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 25°C) 2.5 3.2
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 125°C) 3.5
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 88A, T
j
= 25°C) 3.2
I
CES
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
20 1100
A
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
200
I
GES
Gate-Emitter Leakage Current (V
GE
= ±20V) ±250 nA
Ultra Fast NPT - IGBT
®
The Ultra Fast NPT - IGBT
®
is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT
®
offers superior
ruggedness and ultrafast switching speed.
Features
• Low Saturation Voltage
• Low Tail Current
• RoHS Compliant
• Short Circuit Withstand Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
Combi (IGBT and Diode)
TO-247
APT40GR120B2D30
052-6401 Rev A 4-2012
THERMAL AND MECHANICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Symbol Characteristic Min Typ Max Unit
R
JC
Junction to Case Thermal Resistance (IGBT) .25
°C/W
Junction to Case Thermal Resistance (Diode) .80
R
JA
Junction to Ambient Thermal Resistance 40
W
T
Package Weight
.22 oz
6.2 g
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R
G
is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2
is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol Parameter Test Conditions Min Typ Max Unit
C
ies
Input Capacitance Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz
3980
pF
C
oes
Output Capacitance 320
C
res
Reverse Transfer Capacitance 80
V
GEP
Gate to Emitter Plateau Voltage
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
7V
Q
g
3
Total Gate Charge 210
nC
Q
ge
Gate-Emitter Charge 25
Q
gc
Gate- Collector Charge
90
t
d(on)
Turn-On Delay Time Inductive Switching (25°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 40A
R
G
= 4.3
4
T
J
= +25°C
22
ns
t
r
Current Rise Time 25
t
d(off)
Turn-Off Delay Time 163
t
f
Current Fall Time 40
E
on2
5
Turn-On Switching Energy 1375 3000
J
E
off
6
Turn-Off Switching Energy
906 1650
t
d(on)
Turn-On Delay Time Inductive Switching (125°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 40A
R
G
= 4.3
4
T
J
= +125°C
22
ns
t
r
Current Rise Time 25
t
d(off)
Turn-Off Delay Time 185
t
f
Current Fall Time 47
E
on2
5
Turn-On Switching Energy 1916 3500
J
E
off
6
Turn-Off Switching Energy
1186 2500
052-6401 Rev A 4-2012
APT40GR120B2D30
TYPICAL PERFORMANCE CURVES
0
20
40
60
80
100
120
0 25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50 -25 0 25 50 75 100 125
0
2
4
6
8
10
12
14
16
18
0 100 200 300
0
1
2
3
4
5
6
6 8 10 12 14 16
0
50
100
150
200
250
0 2 4 6 8 10 12 14
0
50
100
150
200
250
300
0 4 8 12 16 20 24 28 32
0
10
20
30
40
50
60
70
80
0 1 2 3 4 5 6
250s PULSE
TEST<0.5 % DUTY
CYCLE
T
J
= 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 20A
I
C
= 40A
I
C
= 80A
I
C
= 40A
I
C
= 80A
10V
15V
I
C
= 40A
T
J
= 25°C
V
CE
= 960V
V
CE
= 600V
V
CE
= 240V
T
J
= 25°C
T
J
= -55°C
V
GE
= 15V
T
J
= - 55°C
T
J
= 150°C
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T
J
= 25°C)
I
C
, COLLECTOR CURRENT (A)
T
J
= 25°C
T
J
= 125°C
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 25°C)
I
C
, COLLECTOR CURRENT (A)
T
J
= 125°C
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4, Transfer Characteristics
I
C
, COLLECTOR CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 8, Gate charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (°C)
FIGURE 3, On State Voltage vs Junction Temperature
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
, Case Temperature (°C)
FIGURE 7, DC Collector Current vs Case Temperature
I
C
, DC COLLECTOR CURRENT (A)
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
-.50 -.25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE
FIGURE 6, Threshold Voltage vs Junction Temperature
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
6V
7V
I
C
= 20A
8V
9V
13V
P1-P3P4-P6P7-P8

APT40GR120B2D30

Mfr. #:
Buy APT40GR120B2D30
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 1200V, 30A, TO-247 T-MAX
Lifecycle:
New from this manufacturer.
Delivery:
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