OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

APT40GR120B2D30

P1-P3P4-P6P7-P8
APT40GR120B2D30
052-6401 Rev A 4-2012
TYPICAL PERFORMANCE CURVES
1
10
100
20 30 40 50 60 70 80
10
100
1000
10 20 30 40 50 60 70 80 90
100
1000
10000
0 25 50 75 100 125
700
1000
5000
0 10 20 30 40 50
100
1000
10000
10 20 30 40 50 60 70 80
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C or 125°C
T
d(on)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Turn-On Time vs Collector Current
SWITCHING TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-Off Time vs Collector Current
SWITCHING TIME (ns)
R
G
, GATE RESISTANCE ()
FIGURE 14, Energy Loss vs Gate Resistance
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Energy Loss vs Collector Current
SWITCHING ENERGY LOSS (J)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
T
r
T
d(off)
T
f
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C
T
J
= 125°C
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C
T
J
= 125°C
E
on2
E
off
E
on2
E
off
V
CE
= 600V, V
GE
=15V, I
C
= 40A
T
J
= 125°C
SWITCHING ENERGY LOSS (J)
E
off
E
on2
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
I
C
= 40A
1.0E11
1.0E10
1.0E9
1.0E8
0 10 20 30 40 50
C
oes
C
res
C
ies
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 9, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (pF)
0.1
1
10
100
300
1 10 100 1000 2000
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 16, Minimum Switching Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
APT30DQ120
I
C
A
D.U.T.
V
CE
V
CC
FIGURE 10, Inductive Switching Test Circuit
1ms
100ms
100s
10ms
052-6401 Rev A 4-2012
APT40GR120B2D30
TYPICAL PERFORMANCE CURVES
0
0.05
0.10
0.15
0.20
0.25
0.30
10
-4
10
-3
10
-2
0.1 1 10
Z
JC
, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 17, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak T
J
= P
DM
x Z
θJC
+T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
APT40GR120B2D30
052-6401 Rev A 4-2012
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 110°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 30A
Forward Voltage I
F
= 60A
I
F
= 30A, T
J
= 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN TYP MAX
2.8
3.4
2.1
APT40GR120B2D30
30
43
210
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN TYP MAX
-
26
- 320
- 545
- 4 -
- 435
- 2100
- 9 -
- 180
- 2975
- 28
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 30A, di
F
/dt = -200A/s
V
R
= 800V, T
C
= 25°C
I
F
= 30A, di
F
/dt = -200A/s
V
R
= 800V, T
C
= 125°C
I
F
= 30A, di
F
/dt = -1000A/s
V
R
= 800V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/s, V
R
= 30V, T
J
= 25°C
TYPICAL PERFORMANCE CURVES
Z
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
D = 0.9
P1-P3P4-P6P7-P8

APT40GR120B2D30

Mfr. #:
Buy APT40GR120B2D30
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 1200V, 30A, TO-247 T-MAX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet