APT40GR120B2D30

052-6401 Rev A 4-2012
APT40GR120B2D30
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
R
= 800V
15A
30A
60A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
600
500
400
300
200
100
0
35
30
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175°C
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
50
45
40
35
30
25
20
15
10
5
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
80
60
40
20
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/s)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 23. Dynamic Parameters vs. Junction Temperature Figure 24. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 25. Junction Capacitance vs. Reverse Voltage
200
180
160
140
120
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/s)
Figure 19. Forward Current vs. Forward Voltage Figure 20. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s) -di
F
/dt, CURRENT RATE OF CHANGE (A/s)
Figure 21. Reverse Recovery Charge vs. Current Rate of Change Figure 22. Reverse Recovery Current vs. Current Rate of Change
0 1 2 3 4 5 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= 125°C
V
R
= 800V
60A
15A
30A
T
J
= 125°C
V
R
= 800V
60A
30A
15A
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
APT40GR120B2D30
052-6401 Rev A 4-2012
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
These dimensions are equal to the TO-247 without the mounting hole.
2-Plcs.
Dimensions in Millimeters and (Inches)
e3 100% Sn Plated
T-MAX
®
(B2) Package Outline
1.016(.040)
Dynamic Characteristics T
J
= 25°C unless otherwise speci ed
4
3
1
2
5
Zer o
0.25 I
RR
M
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjus t
30μH
D.U.T.
+18V
0V
V
r
t
rr
/
Q
rr
Waveform
Figure 27. Diode Reverse Recovery Waveform De nition
Figure 26. Diode Test Circuit
I
F
- Forward Conduction Current
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
RRM
- Maximum Reverse Recovery Current
t
rr
- Reverse Recovery Time measured from zero crossing where
diode current goes from positive to negative, to the point at
which the straight line through I
RRM
and 0.25, I
RRM
passes through zero.
Q
rr
- Area Under the Curve De ned by I
RRM
and t
RR.
5
1
2
3
4
Collector (Cathode)
Gate
Emitter (Anode)
Collector (Cathode)

APT40GR120B2D30

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 1200V, 30A, TO-247 T-MAX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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