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MUR420

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2009
July, 2009 − Rev. 7
1 Publication Order Number:
CS5124/D
CS5124
High Performance,
Integrated Current Mode
PWM Controllers
The CS5124 is a fixed frequency current mode controller designed
specifically for DC−DC converters found in the telecommunications
industry. The CS5124 integrates many commonly required current
mode power supply features and allows the power supply designer to
realize substantial cost and board space savings.
The CS5124 integrates the following features: Internal Oscillator,
Slope Compensation, Sleep On/Off, Undervoltage Lock Out, Thermal
Shutdown, Soft−Start Timer, Low Voltage Current Sense for Resistive
Sensing, Second Current Threshold for Pulse−by−Pulse overcurrent
Protection, a Direct Optocoupler Interface and Leading Edge Current
Blanking.
The CS5124 has supply range of 7.7 V to 20 V and is available in 8
pin SOIC narrow package.
Features
• 400 kHz Oscillating Frequency
• Line UVLO Monitoring
• Low Current Sense Voltage for Resistive Current Sensing
• Bias for Startup Circuitry
• Thermal Shutdown
• Sleep On/Off Pin
• Soft−Start Timer
• Leading Edge Blanking
• Direct Optocoupler Interface
• 90 ns Propagation Delay
• 35 ns Driver Rise and Fall Times
• Sleep Mode
• Pb−Free Packages are Available
CS5124XDR8
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
CS5124XD8 SOIC−8 95 Units/Rail
SOIC−8 2500 Tape & Reel
SOIC−8
D SUFFIX
CASE 751
V
FB
SS
1
CS512
ALYW4
G
8
I
SENSE
UVLO
GATEBIAS
GNDV
CC
PIN CONNECTIONS AND
MARKING DIAGRAM
CS5124XDR8G SOIC−8
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
1
8
CS5124XD8G SOIC−8
(Pb−Free)
95 Units/Rail
CS5124
http://onsemi.com
2
Figure 1. Application Diagram
V
FB
5V
OUT
36−75V
IN
V
CC
GND
CS5124
MBRD360CT
10 W
0.39 W
1000 pF
0.1 mF
1.5 mF
C8
1000 pF
10 mH
GATE
I
S
BIAS
UVLO
SS
10 k
C7
C3
C2
C1
0.1 mF
0.022 mF
L1
R8
C6
0.01 mF
R9
C5
R3
R7
1.0 k
30.1 k
ENABLE
C9
Q2
IRFR220
T1
C4
D1
D4
R5
R2
R1
Q1
ZVN3310A
CTX15−14514
48VRTN
ISOLATED
RTN
47 mF
U2
TPS5908
R4
100 V
100 V
17.4 k
200 k
510 k
10 V
47 W
R6
BAS16LT1
0.47 mF
25 V
MAXIMUM RATINGS
Rating Value Unit
Operating Junction Temperature, T
J
−40 to 135 °C
Storage Temperature Range, T
S
−40 to 150 °C
ESD Susceptibility (Human Body Model) 2.0 kV
Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1) 230 peak °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 60 second maximum above 183°C.
MAXIMUM RATINGS
Pin Name Pin Symbol V
MAX
V
MIN
I
SOURCE
I
SINK
V
CC
Power Input V
CC
20 V −0.3 V 1.0 mA 1.5 A Peak
200 mA DC
V
CC
Clamp Output V
BIAS
20 V −0.3 V 1.0 mA 1.0 mA
UVLO Shutdown Input UVLO 6.0 V −0.3 V 1.0 mA 1.0 mA
Soft−Start Capacitor Input SS 6.0 V −0.3 V 1.0 mA 2.0 mA
Voltage Feedback Input V
FB
6.0 V −0.3 V 3.0 mA 20 mA
Current Sense Input I
SENSE
6.0 V −0.3 V 1.0 mA 1.0 mA
Ground GROUND 0 V 0 V 1.5 A peak
200 mA DC
1.0 mA
Gate Drive Output GATE 20 V −0.3 V 1.5 A peak
200 mA DC
1.5 A peak
200 mA DC
CS5124
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (−40°C ≤ T
J
≤ 125°C; −40°C ≤ T
A
≤ 105°C, 7.60 V ≤ V
CC
≤ 20 V, UVLO = 3.0 V,
I
SENSE
= 0 V, C
V(CC)
= 0.33 mF, C
GATE
= 1.0 nF (ESR = 10 W); C
SS
= 470 pF; C
V(FB)
= 100 pF, unless otherwise specified.)
Characteristic
Test Conditions Min Typ Max Unit
General
I
CC
Operating − V
GATE
not switching − − 10 13 mA
I
CC
at V
CC
Low V
CC
= 6.0 V − 500 750
mA
I
CC
Sleep V
UVL
= 1.0 V − 210 275
mA
Low V
CC
Lockout
V
CC
Turn−on Threshold Voltage − 7.2 7.7 8.3 V
V
CC
Turn−off Threshold Voltage − 6.8 7.3 7.8 V
V
CC
Hysteresis − 350 425 500 mV
UVLO
Sleep Threshold Voltage
UVLO decreasing 1.5 1.8 2.3 V
Sleep Threshold Voltage UVLO increasing − 1.88 2.45 V
Sleep Hysteresis − 35 85 150 mV
UVLO Turn−off Threshold Voltage (Note 2) 2.3 2.45 2.6 V
UVLO Turn−on Threshold Voltage (Note 2) 2.50 2.63 2.76 V
UVLO Hysteresis Turn−on − Turn−off (−40°C ≤ T
J
≤ 100°C) (Note 2) 170 185 200 mV
UVLO Hysteresis Turn−on − Turn−off (100°C ≤ T
J
≤ 125°C) (Note 2) 50 185 400 mV
UVLO Input Bias Current − −1.0 − 1.0
mA
UVLO Clamp With UVLO sinking 1.0 mA 5.0 7.5 12 V
V
CC
Clamp and BIAS Pin Connect an NFET as follows: BIAS = G, V
CC
= S, V
IN
= D.
V
CC
Clamp Voltage 36 V ≤ V
IN
≤ 60 V, 200 nF ≤ C
SS
≤ 500 nF,
R = 500 k
7.275 7.9 8.625 V
BIAS Minimum Voltage Measure Voltage on BIAS with:
10 V ≤ V
CC
≤ 20 V & 50 mA ≤ I
BIAS
≤ 1.0 mA
1.6 2.8 4.0 V
BIAS Clamp With BIAS pin sinking 1.0 mA 12 15 20 V
Difference between Regulated V
CC
& V
CC
Turn−on Threshold Voltage
(V
CC
Clamp Voltage) − (V
CC
Turn−on Threshold) 100 − − mV
400 kHz Oscillator
Operating Frequency
− 360 400 440 kHz
Max Duty Cycle Clamp − 80.0 82.5 85.0 %
Slope Compensation − 15 21 26
mV/m
σ
2. Not tested in production. Specification is guaranteed by design.
P1-P3P4-P6P7-P9P10-P11

MUR420

Mfr. #:
Buy MUR420
Manufacturer:
Rectron
Description:
Rectifiers 4.0A 200V ULTRAFAST
Lifecycle:
New from this manufacturer.
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