Si2308CDS
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Vishay Siliconix
S17-0939-Rev. A, 19-Jun-17
2
Document Number: 77744
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 s, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 60 - - V
V
DS
temperature coefficient ΔV
DS
/T
J
I
D
= 250 µA
-40-
mV/°C
V
GS(th)
temperature coefficient ΔV
GS(th)
/T
J
--4.5-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 1 - 3 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 60 V, V
GS
= 0 V - - 1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 70 °C - - 10
On-state drain current
a
I
D(on)
V
DS
≤ 10 V, V
GS
= 10 V 6 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 1.9 A - 0.120 0.144
Ω
V
GS
= 4.5 V, I
D
= 1.5 A - 0.160 0.200
Forward transconductance
a
g
fs
V
DS
= 30 V, I
D
= 1.9 A - 3.2 - S
Dynamic
b
Input capacitance C
iss
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
- 105 -
pFOutput capacitance C
oss
-55-
Reverse transfer capacitance C
rss
-7-
Total gate charge Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 1.9 A - 2 4
nC
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 1.9 A
- 1.05 2.1
Gate-source charge Q
gs
-0.62-
Gate-drain charge Q
gd
-0.17-
Gate resistance R
g
f = 1 MHz 0.3 1.5 3 Ω
Turn-on delay time t
d(on)
V
DD
= 30 V, R
L
= 20 Ω, I
D
≅ 1.5 A,
V
GEN
= 10 V, R
g
= 1 Ω
-816
ns
Rise time t
r
-510
Turn-off delay time t
d(off)
-1120
Fall time t
f
-36
Turn-on delay time t
d(on)
V
DD
= 30 V, R
L
= 20 Ω, I
D
≅ 1.5 A,
V
GEN
= 4.5 V, R
g
= 1 Ω
-2335
Rise time t
r
-2540
Turn-off delay time t
d(off)
-1020
Fall time t
f
-1630
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C - - 1.7
A
Pulse diode forward current I
SM
--4
Body diode voltage V
SD
I
S
= 1.5 A, V
GS
= 0 V - 0.85 1.2 V
Body diode reverse recovery time t
rr
I
F
= 1.5 A, di/dt = 100 A/µs, T
J
= 25 °C
-1530ns
Body diode reverse recovery charge Q
rr
-5380nC
Reverse recovery fall time t
a
-27-
ns
Reverse recovery rise time t
b
-17-
