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SI2308CDS-T1-GE3

P1-P3P4-P6P7-P7
Si2308CDS
www.vishay.com
Vishay Siliconix
S17-0939-Rev. A, 19-Jun-17
4
Document Number: 77744
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.01
0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
1.5
1.7
1.9
2.1
2.3
2.5
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
V
GS(th)
(V)
T
J
- Temperature (°C)
2nd line
I
D
= 250 µA
10
100
1000
10000
0
0.1
0.2
0.3
0.4
246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 150 °C
0
2
4
6
8
10
0.01
Time (s)
Power(W)
T
A
=25 °C
0.1 1 10 100 1000
10
100
1000
10000
0.001
0.01
0.1
1
10
0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
I
DM
limited
Limited by R
DS(on)
(1)
T
A
= 25 °C
single pulse
BVDSS limited
100 ms
10 ms
1 ms
100 µs
10s, 1s
DC
Si2308CDS
www.vishay.com
Vishay Siliconix
S17-0939-Rev. A, 19-Jun-17
5
Document Number: 77744
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power, Junction-to-Case Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
10
100
1000
10000
0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
2nd line
10
100
1000
10000
0
0.5
1.0
1.5
2.0
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
Power (W)
T
C
- Case Temperature (°C)
2nd line
10
100
1000
10000
0
0.18
0.36
0.54
0.72
0.90
0 255075100125150
Axis Title
1st line
2nd line
2nd line
Power (W)
T
A
- Ambient Temperature (°C)
2nd line
Si2308CDS
www.vishay.com
Vishay Siliconix
S17-0939-Rev. A, 19-Jun-17
6
Document Number: 77744
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77744
.
10
-3
10
-2
110 100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty cycle = 0.5
Single pulse
0.02
0.05
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single pulse
0.02
0.05
t
1
t
2
Notes:
P
DM
1. Duty cycle, D =
2. Per unit base = R
thJF
= 50 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface mounted
P1-P3P4-P6P7-P7

SI2308CDS-T1-GE3

Mfr. #:
Buy SI2308CDS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
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