NB3N51034
http://onsemi.com
4
Table 4. MAXIMUM RATINGS (Note 2)
Symbol
Parameter Rating Units
V
DD
Positive Power Supply with respect to GND (VDDXD and VDDODA) 4.6 V
V
I
Input Voltage with respect to GND (V
IN
) −0.5 V to V
DD
+0.5 V V
T
A
Operating Temperature Range −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction−to−Ambient) (Note 3) 0 lfpm
500 lfpm
70
61
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) 50 °C/W
T
sol
Wave Solder 265 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
Table 5. DC CHARACTERISTICS (V
DD
= 3.3 V ±5%, GND = 0 V, T
A
= −40°C to +85°C, Note 4)
Symbol
Characteristic Min Typ Max Unit
V
DD
Power Supply Voltage (VDDXD and VDDODA) 3.135 3.3 3.465 V
GND Power Supply Ground (GNDXD and GNDODA) 0 V
I
DD
Power Supply Current, 200 MHz output, −1.5% spread 135 mA
I
DDOE
Power Supply Current when OE is Set Low 60 mA
I
DDPD
Power Supply Current (PD = Low, no load) 1.5 mA
V
IH
Input HIGH Voltage (X1/CLK, S0, S1, S2 and OE) 2000 V
DD
+ 300 mV
V
IL
Input LOW Voltage (X1/CLK, S0, S1, S2 and OE) GND − 300 800 mV
Vmax Absolute Maximum Output Voltage (Notes 5, 6) 1150 mV
Vmin Absolute Minimum Output Voltage (Notes 5, 7) −300 mV
Vrb Ringback Voltage (Notes 8, 9) −100 100 mV
V
OH
Output High Voltage (Note 5) 660 850 mV
V
OL
Output Low Voltage (Note 5) −150 27 mV
V
CROSS
Absolute Crossing Voltage (Notes 5, 9, 10) 250 550 mV
DV
CROSS
Total Variation of V
CROSS
(Notes 5, 9, 11) 140 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. VDDXD and VDDODA power pins must be shorted to power supply voltage V
DD
and GNDXD and GNDODA ground pins must be shorted
to power supply ground GND. Measurement taken with outputs terminated with R
S
= 33.2 W, R
L
= 50 W, with test load capacitance of 2 pF
and current biasing resistor set at 475 W. See Figure 7. Guaranteed by characterization.
5. Measurement taken from single-ended waveform
6. Defined as the maximum instantaneous voltage value including positive overshoot
7. Defined as the maximum instantaneous voltage value including negative overshoot
8. Measurement taken from differential waveform
9. Measured at crossing point where the instantaneous voltage value of the rising edge of CLKx+ equals the falling edge of CLKx-.
10.Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing points
for this measurement.
11. Defined as the total variation of all crossing voltage of rising CLKx+ and falling CLKx-. This is maximum allowed variance in the V
CROSS
for
any particular system.
