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NCP81252MNTXG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NCP81252
www.onsemi.com
7
Table 3. ELECTRICAL CHARACTERISTICS (V
IN
= 12 V, V
CC
= V
CCP
= 5 V, V
OUT
= 1.0 V, typical values are referenced to T
J
=
25°C, Min and Max values are referenced to T
J
from −40°C to 125°C. unless otherwise noted.)
Characteristics UnitMaxTypMinSymbolTest Conditions
DIFFERENTIAL CURRENT−SENSE AMPLIFIER
DC Gain
(Note 5) GAIN_DCA 80 dB
−3dB Gain Bandwidth
CL = 20 pF to GND, RL = 10 kW to
GND (Note 5)
BW_DCA 10 MHz
Input Offset Voltage V
OS_CS
−300 − 300
mV
Input Bias Current CSSUM = CSREF = 1.2 V I
CSSUM
I
CSREF
−7.5
−10
7.5
10
nA
mA
ERROR AMPLIFIER
DC Gain
CL = 20 pF to GND, RL = 10 kW to
GND (Note 5)
GAIN_EA 80 dB
Unity Gain Bandwidth
CL = 20 pF to GND, RL = 10 kW to
GND (Note 5)
BW_EA 20 MHz
Slew Rate nVin = 100 mV, G = −10 V/V,
nVout = 1.5 V – 2.5 V,
CL = 20 pF to GND, RL = 10 kW to
GND (Note 5)
SR_EA 25
V/ms
Output Voltage Swing
Isource_EA = 2 mA Vmax_EA 3.5 − −
V
Isink_EA = 2 mA Vmin_EA − − 1
FB Voltage V
FB
1.3 V
Input Bias Current VFB = 1.3 V I
FB
−1.5 1.5
mA
SWITCHING FREQUENCY
Normal Operation Frequency
(Programmed by a resistor at FREQ
pin)
(Note 5) FSW 500 1200 kHz
FREQ Output Voltage VFREQ 1.95 2.0 2.05 V
CONTROL LOGIC
ENABLE Input High Voltage
VEN_H 0.8 − − V
ENABLE Input Low Voltage VEN_L − − 0.3 V
ENABLE Input Hysteresis VEN_HYS − 300 − mV
ENABLE Input Bias Current IEN_BIAS − 1.0
mA
TSENSE
Alert# Assert Threshold
491 mV
Alert# De−assert Threshold 513 mV
VR_HOT# Assert Threshold 472 mV
VR_HOT# De−assert Threshold 494 mV
TSENSE Bias Current V
TSENSE
= 0.4 V 112 120 128
mA
VBOOT
Sensing Current
V
VBOOT
= GND 10
mA
IMAX
Sensing Current
V
IMAX
= GND 10
mA
5. Guaranteed by design, not tested in production.
6. T
J
= 25°C.
NCP81252
www.onsemi.com
8
Table 3. ELECTRICAL CHARACTERISTICS (V
IN
= 12 V, V
CC
= V
CCP
= 5 V, V
OUT
= 1.0 V, typical values are referenced to T
J
=
25°C, Min and Max values are referenced to T
J
from −40°C to 125°C. unless otherwise noted.)
Characteristics UnitMaxTypMinSymbolTest Conditions
ADC
Voltage Range
0 2.0 V
Total Unadjusted Error (TUE) −1 1 %
Differential Nonlinearity (DNL) 8−bit 1 LSB
Power Supply Sensitivity ±1 %
Conversion Time 30
ms
Round Robin 90
ms
VR_READY (VRRDY Output)
Rise Time
External 1 kW pull−up to 3.3 V,
CTOT = 45 pF, D Vo = 10% to 90%
120 ns
Fall Time
External 1 kW pull−up to 3.3 V,
CTOT = 45 pF, D Vo = 90% to 10%
20 ns
Output Voltage at Power−Up
Pulled up to 5 V via 2 kW
− − 1.0 V
VR_READY Delay (Rising) DAC = Target to VR_READY 50
ms
VR_READY Delay (Falling) From OCP or OVP 5
ms
VRRDY Pin Low Voltage Voltage at VRRDY pin with 4 mA sink
current
VPG_L − − 0.3 V
VRRDY Pin Leakage Current VRRDY = 5 V PG_LK −1.0 − 1.0
mA
OVER VOLTAGE PROTECTION
Absolute Over Voltage Threshold
During Soft−Start
2.8 2.9 3.0 V
Over Voltage Threshold Above DAC VSP rising 350 400 425 mV
Over Voltage Delay VSP rising to GH low 50 ns
UNDER VOLTAGE PROTECTION
Under Voltage Threshold Below DAC
VSP falling 250 300 350 mV
Under−voltage Delay 5
ms
OVER CURRENT PROTECTION
ILIM Threshold Current
(OCP shutdown after 50 ms delay)
I
LIMTH_SLOW
8.5 10.0 12.0
mA
ILIM Threshold Current
(immediate OCP shutdown)
I
LIMTH_FAST
12.0 15.0 18.0
mA
IOUT OUTPUT
Current Gain
(IOUTCURRENT) / (ILIMCURRENT);
RILIM = 20 kW; RIOUT = 5.0 kW;
DAC = 0.8 V, 1.25 V, 1.52 V
9.5 10 10.5 A/A
Input Referred Offset Voltage ILIM − CSREF −5.5 − 5.5 mV
Output Source Current
ILIM sink current = 80 mA
800
mA
HIGH−SIDE MOSFET
Drain−to−Source ON Resistance
VGS = 4.5 V, ID = 10 A R
ON_H
− 8.0 −
mW
LOW−SIDE MOSFET
Drain−to−Source ON Resistance
VGS = 4.5 V, ID = 10 A R
ON_L
− 4.0 −
mW
5. Guaranteed by design, not tested in production.
6. T
J
= 25°C.
NCP81252
www.onsemi.com
9
Table 3. ELECTRICAL CHARACTERISTICS (V
IN
= 12 V, V
CC
= V
CCP
= 5 V, V
OUT
= 1.0 V, typical values are referenced to T
J
=
25°C, Min and Max values are referenced to T
J
from −40°C to 125°C. unless otherwise noted.)
Characteristics UnitMaxTypMinSymbolTest Conditions
HIGH−SIDE GATE DRIVE
Pull−High Drive ON Resistance
V
BST
– V
SW
= 5 V R
DRV_HH
− 1.2 2.9
W
Pull−Low Drive ON Resistance V
BST
– V
SW
= 5 V R
DRV_HL
− 0.8 2.2
W
GH Propagation Delay Time From GL falling to GH rising T
GH_d
15 ns
LOW−SIDE GATE DRIVE
Pull−High Drive ON Resistance
V
CCP
– V
PGND
= 5 V R
DRV_LH
− 0.9 3.0
W
Pull−Low Drive ON Resistance V
CCP
– V
PGND
= 5 V R
DRV_LL
− 0.4 1.25
W
GL Propagation Delay Time From GH falling to GL rising T
GL_d
10 ns
SW to PGND RESISTANCE
SW to PGND Pull−Down Resistance
(Note 5) R
SW
− 1.88 −
kW
BOOTSTRAP RECTIFIER SWITCH
On Resistance
EN = L or EN = H and DRVL = H R
on_BST
5 13 22
W
5. Guaranteed by design, not tested in production.
6. T
J
= 25°C.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

NCP81252MNTXG

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Buy NCP81252MNTXG
Manufacturer:
ON Semiconductor
Description:
Switching Voltage Regulators SINGLE-PHASE VOLTAGE RE
Lifecycle:
New from this manufacturer.
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