NIS5102
http://onsemi.com
3
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Input Voltage, Operating, Steady-State (Input + to Input -) V
in
-0.3 to 18 V
Input Voltage, Operating, Transient (Input + to Input -), 1 second V
in
-0.3 to 25 V
Drain Voltage, Operating, Steady-State (Drain to Input -) V
DD
-0.3 to 18 V
Drain Voltage, Operating, Transient (Drain to Input -), 1 second V
DD
-0.3 to 25 V
Drain Current, Peak I
Dpk
20 A
Continuous Current (T
A
= 25°C, 0.5 in
2
pad) I
Davg
10 A
Voltage on Power Good Pin (Pin 7) V
max7
20 V
Thermal Resistance, Junction-to-Air
0.5 in
2
Copper
1 in
2
Copper
Q
JA
76.5
41.2
°C/W
°C/W
Thermal Resistance, Junction-to-Lead Q
JL
3.2 °C/W
Power Dissipation (T
A
= 25°C, 0.5 in
2
pad) P
max
1.4 W
Operating Temperature Range (Note 1) T
J
-40 to 175 °C
Non-Operating Temperature Range T
J
-55 to 175 °C
Lead Temperature, Soldering (10 Sec) T
L
235 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Actual maximum junction temperature is limited by an internal protection circuit and will not reach the absolute maximum temperature as
specified.
ELECTRICAL CHARACTERISTICS (V
CC
= 12 V, R
LIMIT
= 36 W, C
Charge
= 100 pF, T
J
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
POWER FET
Delay Time (Enable High to I
S
= 100 mA) T
dly
- 2.0 - ms
Charging Time (I
S
= 100 mA to I
S
= 5.0 A, R
LIMIT
= 36 W)
t
chg
- 1.0 - ms
ON Resistance (V
CC
= 12 V, I
S
= 5.0 A) (Note 2) R
DSon
- 10 13
mW
Zero Gate Voltage Drain Current
(V
DS
= 12 V
dc
, V
GS
= 0 V
dc
)
I
DSS1
- - 10
mA
Zero Gate Voltage Drain Current
(V
DS
= 18 V
dc
, V
GS
= 0 V
dc
)
I
DSS2
- - 100
mA
Output Capacitance (V
DS
= 12 V
dc
, V
GS
= 0 V
dc
, f = 10 kHz) - - - - pF
THERMAL LIMIT
Shutdown Temperature (Note 3)
T
SD
125 135 145 °C
Hysteresis (Note 3) T
hyst
- 40 - °C
OVER/UNDERVOLTAGE
UVLO Turn-on (Input + Increasing, Rext
UVLO
= 620 k) V
on
10.05 11.15 12.30 V
UVLO Hysteresis (Input + Decreasing, Rext
UVLO
= 620 k) V
hyst
0.45 0.62 0.75 V
OVLO Turn-off (Input + Increasing, Rext
UVLO
= 620 k) V
off
14.0 16.4 19.0 V
OVLO Hysteresis (Input + Decreasing, Rext
UVLO
= 620 k) V
hyst
0.6 0.78 1.0 V
PARALLEL SHUTDOWN (Alternate Function on OVLO Pin)
Device Fan-out (Minimum External Resistor Value = 2.0 kW (Note 3)
N
fan
- - 4.0 Devices
Shutdown Voltage Threshold (OVLO Pin) V
SD
0.6 0.8 - V
Shutdown State Output Voltage (Isink = 2.0 mA) V
low
- 0.3 0.4 V
2. Pulse Test: Pulse width 300 ms, duty cycle 2%.
3. Verified by design.
