NIS5102
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4
ELECTRICAL CHARACTERISTICS (continued) (V
CC
= 12 V, R
LIMIT
= 36 W, C
Charge
= 100 pF, T
J
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
CURRENT LIMIT
Current Limit (Short Circuit, R
LIMIT
= 36 W)
I
LIM1
3.8 4.8 5.8 A
Current Limit (Overload, R
LIMIT
= 36 W) (Note 3)
I
LIM2
7.0 7.8 8.6 A
ENABLE/TIMER
Enable Voltage (Turn-On)
V
ENon
2.2 - - V
Enable Voltage (Turn-Off) V
ENoff
- - 1.6 V
Charging Current (Into External Capacitor) I
Charge
65 77 88
mA
Turn-on Delay (Time from Enable High to I
source
= 100 mA) t
delay
- 2.2 - ms
CHARGE PUMP
C
Charge
(Voltage on Pin 5 with Respect to Ground)
V
CC
= 18 Vdc
V
Ccharge
-
-
18
26
-
-
V
V
POWER GOOD
Power Good High Z Signal when FET is Fully Enhanced
- - - - -
Low Z State Output Voltage (I
Sink
= 2 mA) Vpin7 - 230 300 mV
Leakage Current (Vpin7 = 12 V, High Z State) I
Leak
- 2.0 10
mA
Power Good Delay
(Time from Power FET is Fully Enhanced to Power Good FET Changing State)
t
pwrgood
- 15 - ms
TOTAL DEVICE
Bias Current (Operational, V
CC
= 12 V) I
Bias
- 1.3 2.0 mA
Bias Current (Non-operational, V
CC
= 7 V)) I
Bias
- 400 700
mA
Minimum Operating Voltage Vcc
min
- 8.5 9.0 V
Enable/Timer
Input
Threshold
Source Voltage
Output Current
Figure 2. Timing Diagram for External Enabled Delay
NIS5102
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5
0.1
1
10
100
10 100 1000
100 200 300 400 500 600 700 800 900 1000
UVLO TRIP POINT (V)
Figure 3. UVLO Adjustment Figure 4. OVLO Adjustment
R
UVLO
(kW)
19
Figure 5. Current Limit Adjustment
Overload
I
Limit
(A)
R
ILmit
(W)
8
9
10
11
12
13
14
1000500 900
Turn-on
Turn-off
18
17
16
15
14
13
12
11
10
9
OVLO TRIP POINT (V)
R
OVLO
(kW)
Turn-on
Turn-off
Short Circuit
200 300 400 600 700 800
0.01
0.1
1
10
10 100 10000
Figure 6. Current Limit vs. Temperature for
182W
di/dt (A/ms)
LOAD CAPACITANCE (mF)
Vin = 12 V
Rext_ILimit = 100 W
1000
Figure 7. Load Capacitance vs. Output di/dt
105
95
85
75
65
55
45
35
25
13119.07.05.03.01.0
CONTINUOUS CURRENT, A
CASE TEMPERATURE, °C
1/4 sq in copper area
1 sq in copper area
2 sq in copper area
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C unless otherwise noted)
Device Reaching
Thermal Shutdown
CURRENT (A)
Figure 8. Continuous Current vs. Case Temperature
(Test performed on a double-sided copper board, 1 oz)
T
J
, JUNCTION TEMPERATURE, (°C)
4
6
8
10
12
9004010 20 30 50 70 8060
0
2
Overload
Short Circuit
NIS5102
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6
UVLO Trip Point, Volts
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C unless otherwise noted)
R
DS(on)
, (mW)
Figure 9. Typical R
DS(on)
vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE, (°C)
4
6
8
10
12
14
16
125565-40 -25 -10 20 35 50 11080 95
0
2

NIS5102QP1HT1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Hot Swap Voltage Controllers MI HI SDE SMRT HOTPLUG
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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