LT1167
10
1167fc
TYPICAL PERFORMANCE CHARACTERISTICS
Overshoot vs Capacitive Load Large-Signal Transient Response Small-Signal Transient Response
Output Impedance vs Frequency Large-Signal Transient Response Small-Signal Transient Response
Current Noise Density
vs Frequency 0.1Hz to 10Hz Current Noise Short-Circuit Current vs Time
FREQUENCY (Hz)
1
10
CURRENT NOISE DENSITY (fA/
Hz
)
100
1000
10 100 1000
1167 G22
V
S
= ±15V
T
A
= 25°C
R
S
TIME (SEC)
0
CURRENT NOISE (5pA/DIV)
8
1167 G23
2
4
5
10
6
1
3
9
7
V
S
= ±15V
T
A
= 25°C
TIME FROM OUTPUT SHORT TO GROUND (MINUTES)
0
–50
(SINK) (SOURCE)
OUTPUT CURRENT (mA)
–40
–20
–10
0
50
20
1
2
1167 G24
–30
30
40
10
3
T
A
= –40°C
V
S
= ±15V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
T
A
= 85°C
T
A
= 25°C
CAPACITIVE LOAD (pF)
10
40
OVERSHOOT (%)
50
60
70
80
100 1000 10000
1167 G25
30
20
10
0
90
100
V
S
= ±15V
V
OUT
= ±50mV
R
L
= ∞
A
V
≥ 100
A
V
= 10
A
V
= 1
10μs/DIV
5V/DIV
1167 G28
G = 1
V
S
= ±15V
R
L
= 2k
C
L
= 60pF
10μs/DIV
20mV/DIV
1167 G29
G = 1
V
S
= ±15V
R
L
= 2k
C
L
= 60pF
FREQUENCY (kHz)
1
OUTPUT IMPEDANCE (Ω)
10
100
1000
10 100 1000
1167 G26
0.1
1
V
S
= ±15V
T
A
= 25°C
G = 1 TO 1000
10μs/DIV
5V/DIV
1167 G31
G = 1
V
S
= ±15V
R
L
= 2k
C
L
= 60pF
10μs/DIV
20mV/DIV
1167 G32
G = 10
V
S
= ±15V
R
L
= 2k
C
L
= 60pF
LT1167
11
1167fc
TYPICAL PERFORMANCE CHARACTERISTICS
Settling Time vs Gain Large-Signal Transient Response Small-Signal Transient Response
Settling Time vs Step Size Slew Rate vs Temperature
Output Voltage Swing
vs Load Current
Undistorted Output Swing
vs Frequency Large-Signal Transient Response Small-Signal Transient Response
FREQUENCY (kHz)
1
20
25
PEAK-TO-PEAK OUTPUT SWING (V)
30
35
10 100 1000
1167 G27
15
10
5
0
G = 1
G = 10, 100, 1000
V
S
= ±15V
T
A
= 25°C
10μs/DIV
5V/DIV
1167 G34
G = 100
V
S
= ±15V
R
L
= 2k
C
L
= 60pF
10μs/DIV
20mV/DIV
1167 G35
G = 100
V
S
= ±15V
R
L
= 2k
C
L
= 60pF
GAIN (dB)
1
1
SETTLING TIME (μs)
10
100
1000
10 100 1000
1167 G30
V
S
= ±15V
T
A
= 25°C
ΔV
OUT
= 10V
1mV = 0.01%
50μs/DIV
5V/DIV
1167 G37
G = 1000
V
S
= ±15V
R
L
= 2k
C
L
= 60pF
50μs/DIV
20mV/DIV
1167 G38
G = 1000
V
S
= ±15V
R
L
= 2k
C
L
= 60pF
SETTLING TIME (μs)
2
OUTPUT STEP (V)
2
6
10
10
1167 G33
–2
–6
0
4
8
–4
–8
–10
4
6
8
311
5
7
9
12
0V
V
OUT
TO 0.1%
TO 0.1%
TO 0.01%
TO 0.01%
0V
V
OUT
V
S
= ±15
G = 1
T
A
= 25°C
C
L
= 30pF
R
L
= 1k
TEMPERATURE (°C)
–50 25
0.8
SLEW RATE (V/μs)
1.2
1.8
0
50
75
1167 G36
1.0
1.6
1.4
25
100
125
V
S
= ±15V
V
OUT
= ±10V
G = 1
+SLEW
SLEW
OUTPUT CURRENT (mA)
OUTPUT VOLTAGE SWING (V)
(REFERRED TO SUPPLY VOLTAGE)
+V
S
+V
S
– 0.5
+V
S
– 1.0
+V
S
– 1.5
+V
S
– 2.0
–V
S
+ 2.0
–V
S
+ 1.5
–V
S
+ 1.0
–V
S
+ 0.5
–V
S
0.01 1 10 100
1167 G39
0.1
V
S
= ±15V
85°C
25°C
40°C
SOURCE
SINK
LT1167
12
1167fc
BLOCK DIAGRAM
THEORY OF OPERATION
Q1
R
G
2
OUTPUT
6
REF
1167 F01
5
7
+
A1
+
A3
VB
R1
24.7k
R3
400Ω
R4
400Ω
C1
1
R
G
8
R7
10k
R8
10k
R5
10k
R6
10k
DIFFERENCE AMPLIFIER STAGEPREAMP STAGE
+IN
–IN
3
+
A2
VB
R2
24.7k
C2
V
+
V
V
V
+
V
Q2 V
V
+
4
V
Figure 1. Block Diagram
The LT1167 is a modified version of the three op amp
instrumentation amplifier. Laser trimming and mono-
lithic construction allow tight matching and tracking of
circuit parameters over the specified temperature range.
Refer to the block diagram (Figure 1) to understand the
following circuit description. The collector currents in
Q1 and Q2 are trimmed to minimize offset voltage drift,
thus assuring a high level of performance. R1 and R2 are
trimmed to an absolute value of 24.7k to assure that the
gain can be set accurately (0.05% at G = 100) with only
one external resistor R
G
. The value of R
G
determines the
transconductance of the preamp stage. As R
G
is reduced
for larger programmed gains, the transconductance of
the input preamp stage increases to that of the input
transistors Q1 and Q2. This increases the open-loop gain
when the programmed gain is increased, reducing the
input referred gain related errors and noise. The input
voltage noise at gains greater than 50 is determined only
by Q1 and Q2. At lower gains the noise of the difference
amplifier and preamp gain setting resistors increase the
noise. The gain bandwidth product is determined by C1,
C2 and the preamp transconductance which increases
with programmed gain. Therefore, the bandwidth does
not drop proportionally to gain.
The input transistors Q1 and Q2 offer excellent matching,
which is inherent in NPN bipolar transistors, as well as
picoampere input bias current due to superbeta process-
ing. The collector currents in Q1 and Q2 are held constant
due to the feedback through the Q1-A1-R1 loop and
Q2-A2-R2 loop which in turn impresses the differential
input voltage across the external gain set resistor R
G
. Since
the current that flows through R
G
also flows through R
1
and R2, the ratios provide a gained-up differential voltage,
G = (R1 + R2)/R
G
, to the unity-gain difference
amplifier A3.
The common mode voltage is removed by A3, resulting
in a single-ended output voltage referenced to the voltage
on the REF pin. The resulting gain equation is:
V
OUT
– V
REF
= G(V
IN
+
– V
IN
)
where:
G = (49.4kΩ/R
G
) + 1
solving for the gain set resistor gives:
R
G
= 49.4kΩ/(G – 1)

LT1167CS8#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Instrumentation Amplifiers 1x Res Gain Progmable, Prec Instr Amp
Lifecycle:
New from this manufacturer.
Delivery:
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