OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

LT1167CS8#PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
LT1167
4
1167fc
ELECTRICAL CHARACTERISTICS
V
S
= ±15V, V
CM
= 0V, T
A
= 25°C, R
L
= 2k, unless otherwise noted.
The
l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T
A
= 25°C.
V
S
= ±15V, V
CM
= 0V, 0°C ≤ T
A
≤ 70°C, R
L
= 2k, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS (NOTE 7)
LT1167AC/LTC1167AI
LT1167AC-1/LTC1167AI-1
LT1167C/LTC1167I
LT1167C-1/LTC1167I-1
UNITSMIN TYP MAX MIN TYP MAX
I
OUT
Output Current 20 27 20 27 mA
BW Bandwidth G = 1
G = 10
G = 100
G = 1000
1000
800
120
12
1000
800
120
12
kHz
kHz
kHz
kHz
SR Slew Rate G = 1, V
OUT
= ±10V 0.75 1.2 0.75 1.2 V/μs
Settling Time to 0.01% 10V Step
G = 1 to 100
G = 1000
14
130
14
130
μs
μs
R
REFIN
Reference Input Resistance 20 20 kΩ
I
REFIN
Reference Input Current V
REF
= 0V 50 50 μA
V
REF
Reference Voltage Range –V
S
+ 1.6 +V
S
– 1.6 –V
S
+ 1.6 +V
S
– 1.6 V
A
VREF
Reference Gain to Output 1 ±0.0001 1 ±0.0001
SYMBOL PARAMETER CONDITIONS (NOTE 7)
LT1167AC/LT1167AC-1 LT1167C/LT1167C-1
UNITSMIN TYP MAX MIN TYP MAX
Gain Error G = 1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
l
l
l
l
0.01
0.08
0.09
0.14
0.03
0.30
0.30
0.33
0.012
0.100
0.120
0.140
0.04
0.33
0.33
0.35
%
%
%
%
Gain Nonlinearity V
OUT
= ±10V, G = 1
V
OUT
= ±10V, G = 10 and 100
V
OUT
= ±10V, G = 1000
l
l
l
1.5
3
20
10
15
60
3
4
25
15
20
80
ppm
ppm
ppm
G/T Gain vs Temperature G < 1000 (Note 2)
l
20 50 20 50 ppm/°C
V
OST
Total Input Referred
Offset Voltage
V
OST
= V
OSI
+ V
OSO
/G
V
OSI
Input Offset Voltage V
S
= ±5V to ±15V
l
18 60 23 80 μV
V
OSIH
Input Offset Voltage Hysteresis (Notes 3, 6) 3.0 3.0 μV
V
OSO
Output Offset Voltage V
S
= ±5V to ±15V
l
60 380 70 500 μV
V
OSOH
Output Offset Voltage Hysteresis (Notes 3, 6) 30 30 μV
V
OSI
/T Input Offset Drift (Note 8) (Note 3)
l
0.05 0.3 0.06 0.4 μV/°C
V
OSO
/T Output Offset Drift (Note 3)
l
0.7 3 0.8 4 μV/°C
I
OS
Input Offset Current
l
100 400 120 550 pA
I
OS
/T Input Offset Current Drift
l
0.3 0.4 pA/°C
I
B
Input Bias Current
l
75 450 105 600 pA
I
B
/T Input Bias Current Drift
l
0.4 0.4 pA/°C
V
CM
Input Voltage Range G = 1, Other Input Grounded
V
S
= ±2.3V to ±5V
V
S
= ±5V to ±18V
l
l
–V
S
+2.1
–V
S
+2.1
+V
S
–1.3
+V
S
–1.4
–V
S
+2.1
–V
S
+2.1
+V
S
–1.3
+V
S
–1.4
V
V
CMRR Common Mode Rejection Ratio 1k Source Imbalance,
V
CM
= 0V to ±10V
G = 1
G = 10
G = 100
G = 1000
l
l
l
l
88
100
115
117
92
110
120
135
83
97
113
114
92
110
120
135
dB
dB
dB
dB
LT1167
5
1167fc
The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T
A
= 25°C.
V
S
= ±15V, V
CM
= 0V, –40°C ≤ T
A
≤ 85°C, R
L
= 2k, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS (NOTE 7)
LT1167AI/LT1167AI-1 LT1167I/LT1167I-1
UNITSMIN TYP MAX MIN TYP MAX
Gain Error G = 1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
l
l
l
l
0.014
0.130
0.140
0.160
0.04
0.40
0.40
0.40
0.015
0.140
0.150
0.180
0.05
0.42
0.42
0.45
%
%
%
%
G
N
Gain Nonlinearity (Notes 2, 4) V
O
= ±10V, G = 1
V
O
= ±10V, G = 10 and 100
V
O
= ±10V, G = 1000
l
l
l
2
5
26
15
20
70
3
6
30
20
30
100
ppm
ppm
ppm
G/T Gain vs Temperature G < 1000 (Note 2)
l
20 50 20 50 ppm/°C
V
OST
Total Input Referred
Offset Voltage
V
OST
= V
OSI
+ V
OSO
/G
V
OSI
Input Offset Voltage
l
20 75 25 100 μV
V
OSIH
Input Offset Voltage Hysteresis (Notes 3, 6) 3.0 3.0 μV
V
OSO
Output Offset Voltage
l
180 500 200 600 μV
V
OSOH
Output Offset Voltage Hysteresis (Notes 3, 6) 30 30 μV
V
OSI
/T Input Offset Drift (Note 8) (Note 3)
l
0.05 0.3 0.06 0.4 μV/°C
V
OSO
/T Output Offset Drift (Note 3)
l
0.8 5 1 6 μV/°C
I
OS
Input Offset Current
l
110 550 120 700 pA
I
OS
/T Input Offset Current Drift
l
0.3 0.3 pA/°C
I
B
Input Bias Current
l
180 600 220 800 pA
I
B
/T Input Bias Current Drift
l
0.5 0.6 pA/°C
V
CM
Input Voltage Range V
S
= ±2.3V to ±5V
V
S
= ±5V to ±18V
l
l
–V
S
+2.1
–V
S
+2.1
+V
S
–1.3
+V
S
–1.4
–V
S
+2.1
–V
S
+2.1
+V
S
–1.3
+V
S
–1.4
V
V
CMRR Common Mode Rejection Ratio 1k Source Imbalance,
V
CM
= 0V to ±10V
G = 1
G = 10
G = 100
G = 1000
l
l
l
l
86
98
114
116
90
105
118
133
81
95
112
112
90
105
118
133
dB
dB
dB
dB
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
S
= ±15V, V
CM
= 0V, 0°C ≤ T
A
≤ 70°C, R
L
= 2k, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS (NOTE 7)
LT1167AC/LT1167AC-1 LT1167C/LT1167C-1
UNITSMIN TYP MAX MIN TYP MAX
PSRR Power Supply Rejection Ratio V
S
= ±2.3V to ±18V
G = 1
G = 10
G = 100
G = 1000
l
l
l
l
103
123
127
129
115
130
135
145
98
118
124
126
115
130
135
145
dB
dB
dB
dB
I
S
Supply Current V
S
= ±2.3V to ±18V
l
1.0 1.5 1.0 1.5 mA
V
OUT
Output Voltage Swing R
L
= 10k
V
S
= ±2.3V to ±5V
V
S
= ±5V to ±18V
l
l
–V
S
+1.4
–V
S
+1.6
+V
S
–1.3
+V
S
–1.5
–V
S
+1.4
–V
S
+1.6
+V
S
–1.3
+V
S
–1.5
V
V
I
OUT
Output Current
l
16 21 16 21 mA
SR Slew Rate G = 1, V
OUT
= ±10V
l
0.65 1.1 0.65 1.1 V/μs
V
REF
REF Voltage Range (Note 3)
l
–V
S
+1.6 +V
S
–1.6 –V
S
+1.6 +V
S
–1.6 V
LT1167
6
1167fc
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
S
= ±15V, V
CM
= 0V, 0°C ≤ T
A
≤ 70°C, R
L
= 2k, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS (NOTE 7)
LT1167AI/LT1167AI-1 LT1167I/LT1167I-1
UNITSMIN TYP MAX MIN TYP MAX
PSRR Power Supply Rejection Ratio V
S
= ±2.3V to ±18V
G = 1
G = 10
G = 100
G = 1000
l
l
l
l
100
120
125
128
112
125
132
140
95
115
120
125
112
125
132
140
dB
dB
dB
dB
I
S
Supply Current
l
1.1 1.6 1.1 1.6 mA
V
OUT
Output Voltage Swing V
S
= ±2.3V to ±5V
V
S
= ±5V to ±18V
l
l
–V
S
+1.4
–V
S
+1.6
+V
S
–1.3
+V
S
–1.5
–V
S
+1.4
–V
S
+1.6
+V
S
–1.3
+V
S
–1.5
V
V
I
OUT
Output Current
l
15 20 15 20 mA
SR Slew Rate G = 1, V
OUT
= ±10V
l
0.55 0.95 0.55 0.95 V/μs
V
REF
REF Voltage Range (Note 3)
l
–V
S
+1.6 +V
S
–1.6 –V
S
+1.6 +V
S
–1.6 V
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Does not include the effect of the external gain resistor RG.
Note 3: This parameter is not 100% tested.
Note 4: The LT1167AC/LT1167C/LT1167AC-1/LT1167C-1 are designed,
characterized and expected to meet the industrial temperature limits, but
are not tested at –40°C and 85°C. I-grade parts are guaranteed.
Note 5: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 6: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25°C, but
the IC is cycled to 85°C I-grade (or 70°C C-grade) or –40°C I-grade
(0°C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
Note 7: Typical parameters are defined as the 60% of the yield parameter
distribution.
Note 8: Referred to input.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

LT1167CS8#PBF

Mfr. #:
Buy LT1167CS8#PBF
Manufacturer:
Analog Devices Inc.
Description:
Instrumentation Amplifiers 1x Res Gain Progmable, Prec Instr Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet