MAX1875/MAX1876
A final pole is added using C
COMP_B
to reduce the
gain and attenuate noise after crossover. This pole
(f
COMP_B
) occurs at:
Figure 8 shows a Bode plot of the poles and zeros in
their relative locations.
Near crossover the following approximations can be
made to simplify the loop-gain equation:
R
COMP
has much higher impedance than C
COMP
.
This is true if, and only if, crossover occurs above
f
Z_COMP_A
. If this is true, C
COMP_A
can be ignored
(as a short to ground).
R
ESR
is much higher impedance than C
OUT
. This is
true if, and only if, crossover occurs well after the out-
put capacitors ESR zero. If this is true, C
OUT
becomes an insignificant part of the loop gain and can
be ignored (as a short to ground).
C
COMP_B
is much higher impedance than R
COMP
and can be ignored (as an open circuit). This is true
if, and only if, crossover occurs far below f
COMP_B
.
The following loop gain equation can be found by using
these previous approximations with Figure 7:
Setting the loop gain to 1 and solving for the crossover
frequency yields:
To ensure stability, select R
COMP
to meet the following
criteria:
Unity-gain crossover must occur below 1/5th of the
switching frequency.
For reasonable phase margin using type 1 compen-
sation, f
CO
must be larger than 5
f
ESR
.
Choose C
COMP_A
so that f
Z_COMP_A
equals half f
LC
using the following equation:
Choose C
COMP_B
so that f
COMP_B
occur at 3 times f
CO
using the following equation:
MOSFET Selection
The MAX1875/MAX1876s step-down controller drives
two external logic-level N-channel MOSFETs as the cir-
cuit switch elements. The key selection parameters are:
On-resistance (R
DS(ON)
)
Maximum drain-to-source voltage (V
DS(MAX)
)
C
fR
COMP B
CO COMP
_
=
××
()
×
1
23π
C
LC
R
COMP A
OUT
COMP
_
=
×2
f GBW
V
V
V
V
gRR
L
CO
IN
RAMP
SET
OUT
M COMP COMP ESR
== ×
×
××
×
_
2π
A
V
V
V
V
gRR
sL
L
IN
RAMP
SET
OUT
M COMP COMP ESR
≅××
××
_
f
RC
COMP B
COMP COMP B
_
_
=
×
1
2π
Dual 180° Out-of-Phase PWM Step-
Down Controllers with POR
16 ______________________________________________________________________________________
COMP_
R
COMP_
C
COMP_A
C
COMP_B
g
M_GROUP
P
W
M
V
C
V
SET
DH
DL
N
N
L
LX
FB
V
OUT
R
ESR
C
OUT
COMP_
R
COMP_
C
COMP_A
C
COMP_B
g
M_GROUP
V
SET
L
LX
FB
R
ESR
C
OUT
GAIN = +V
IN
/V
RAMP
FOR
FREQUENCIES LOWER
THAN NYQUIST
=
Figure 7. Fixed-Frequency Voltage-Mode Control Loop
Minimum threshold voltage (V
TH(MIN)
)
Total gate charge (Q
g
)
Reverse transfer capacitance (C
RSS
)
Power dissipation
All four N-channel MOSFETs must be a logic-level type
with guaranteed on-resistance specifications at V
GS
4.5V. For maximum efficiency, choose a high-side
MOSFET (N
H
_) that has conduction losses equal to the
switching losses at the optimum input voltage. Check to
ensure that the conduction losses at minimum input
voltage do not exceed MOSFET package thermal limits,
or violate the overall thermal budget. Also, check to
ensure that the conduction losses plus switching losses
at the maximum input voltage do not exceed package
ratings or violate the overall thermal budget.
Ensure that the MAX1875/MAX1876 DL_ gate drivers
can drive N
L
_. In particular, check that the dv/dt
caused by N
H
_ turning on does not pull up the N
L
_
gate through N
L
_s drain-to-gate capacitance. This is
the most frequent cause of cross-conduction problems.
Gate-charge losses are dissipated by the driver and do
not heat the MOSFET. All MOSFETs must be selected
so that their total gate charge is low enough that V
L
can
power all four drivers without overheating the IC:
MOSFET package power dissipation often becomes a
dominant design factor. I
2
R power losses are the great-
est heat contributor for both high-side and low-side
MOSFETs. I
2
R losses are distributed between N
H
_ and
N
L
_ according to duty factor as shown in the equations
below. Switching losses affect only the high-side
MOSFET, since the low-side MOSFET is a zero-voltage
switched device when used in the buck topology.
Calculate MOSFET temperature rise according to pack-
age thermal-resistance specifications to ensure that
both MOSFETs are within their maximum junction tem-
perature at high ambient temperature. The worst-case
dissipation for the high-side MOSFET (P
NH
) occurs at
both extremes of input voltage, and the worst-case dis-
sipation for the low-side MOSFET (P
NL
) occurs at maxi-
mum input voltage.
I
GATE
is the average DH driver output current capability
determined by:
where R
DS(ON)DH
is the high-side MOSFET drivers on-
resistance (5 max), and R
GATE
is any series resis-
tance between DH and BST (Figure 3).
where P
NH(CONDUCTION)
is the conduction power loss
in the high-side MOSFET, and P
NL
is the total low-side
power loss.
To reduce EMI caused by switching noise, add a 0.1µF
ceramic capacitor from the high-side switch drain to
the low-side switch source or add resistors in series
with DL_ and DH_ to increase the MOSFETs turn-on
and turn-off times.
Applications Information
Dropout Performance
When working with low input voltages, the output-volt-
age adjustable range for continuous-conduction opera-
tion is restricted by the minimum off-time (t
OFF(MIN)
).
For best dropout performance, use the lowest (100kHz)
switching-frequency setting. Manufacturing tolerances
and internal propagation delays introduce an error to
PIR
V
V
PP P
PI R
V
V
NH CONDUCTION LOAD DS ON NH
OUT
IN
NH TOTAL NH SWITCHING NH CONDUCTION
NL LOAD DS ON NL
OUT
IN
()()
()( )( )
()
=
=+
=
2
2
1-
I
V
RR
GATE
L
DS ON DH GATE
=
+
()
2
()
P
VI f Q Q
I
NH SWITCHING
IN LOAD OSC GS GD
GATE
()
=
+
2
PVQ f
VL IN G TOTAL SW
×
_
MAX1875/MAX1876
Dual 180° Out-of-Phase PWM Step-
Down Controllers with POR
______________________________________________________________________________________ 17
BODE PLOT FOR VOLTAGE-
MODE CONTROLLERS
FREQUENCY (MHz)
GAIN (dB)
0.10.01
-40
-30
-20
-10
0
10
20
30
40
50
0.001 1
f
Z-COMP_A
f
COMP_B
f
LC
f
CO
f
ESR
f
SWITCH
Figure 8. Voltage-Mode Loop Analysis
MAX1875/MAX1876
the switching frequency and minimum off-time specifi-
cations. This error is more significant at higher frequen-
cies. Also, keep in mind that transient response
performance of buck regulators operated close to
dropout is poor, and bulk output capacitance must
often be added (see the V
SAG
equation in the Design
Procedure section).
The absolute point of dropout is when the inductor cur-
rent ramps down during the minimum off-time (I
DOWN
)
as much as it ramps up during the maximum on-time
(I
UP
). The ratio h = I
UP
/I
DOWN
is an indicator of the
ability to slew the inductor current higher in response to
increased load, and must always be greater than 1. As
h approaches 1, the absolute minimum dropout point,
the inductor current cannot increase as much during
each switching cycle and V
SAG
greatly increases
unless additional output capacitance is used.
A reasonable minimum value for h is 1.5, but adjusting
this up or down allows tradeoffs between V
SAG
, output
capacitance, and minimum operating voltage. For a
given value of h, the minimum operating voltage can be
calculated as:
where V
DROP1
is the sum of the parasitic voltage drops
in the inductor discharge path, including synchronous
rectifier, inductor, and PC board resistances; V
DROP2
is
the sum of the resistances in the charging path, includ-
ing high-side switch, inductor, and PC board resis-
tances; and t
OFF(MIN)
is from the Electrical
Characteristics. The absolute minimum input voltage is
calculated with h = 1.
If the calculated V+
(MIN)
is greater than the required
minimum input voltage, then reduce the operating fre-
quency or add output capacitance to obtain an accept-
able V
SAG
. If operation near dropout is anticipated,
calculate V
SAG
to be sure of adequate transient
response.
Dropout Design Example:
V
OUT
= 5V
f
SW
= 600kHz
t
OFF(MIN)
= 250ns
V
DROP1
= V
DROP2
= 100mV
h = 1.5
Calculating again with h = 1 gives the absolute limit of
dropout:
Therefore, V
IN
must be greater than 6V, even with very
large output capacitance, and a practical input voltage
with reasonable output capacitance would be 6.58V.
Improving Noise Immunity
Applications where the MAX1875/MAX1876 must oper-
ate in noisy environments can typically adjust their con-
trollers compensation to improve the systems noise
immunity. In particular, high-frequency noise coupled
into the feedback loop causes jittery duty cycles. One
solution is to lower the crossover frequency (see the
Compensation section).
PC Board Layout Guidelines
Careful PC board layout is critical to achieve low
switching losses and clean, stable operation. This is
especially true for dual converters where one channel
can affect the other. Refer to the MAX1875/MAX1876
EV kit data sheet for a specific layout example.
If possible, mount all of the power components on the
top side of the board with their ground terminals flush
against one another. Follow these guidelines for good
PC board layout:
Isolate the power components on the top side from
the analog components on the bottom side with a
ground shield. Use a separate PGND plane under
the OUT1 and OUT2 sides (referred to as PGND1
and PGND2). Avoid the introduction of AC currents
into the PGND1 and PGND2 ground planes. Run the
power plane ground currents on the top side only.
Use a star ground connection on the power plane to
minimize the crosstalk between OUT1 and OUT2.
Keep the high-current paths short, especially at the
ground terminals. This practice is essential for sta-
ble, jitter-free operation.
Connect GND and PGND together close to the IC.
Do not connect them together anywhere else.
Carefully follow the grounding instructions under
step 4 of the Layout Procedure section.
V
VmV
kHz ns
mV mV V
IN MIN()
()()
=
+
+=
5 100
1 600 250
100 100 6
-
V
VmV
kHz ns
mV mV V
IN MIN()
. ( )( )
.
=
+
+=
5 100
1 1 5 600 250
100 100 6 58
-
V
VV
hf t
VV
IN MIN
OUT DROP
SW OFF MIN
DROP DROP()
()
=
+
+
1
21
1-
-
Dual 180° Out-of-Phase PWM Step-
Down Controllers with POR
18 ______________________________________________________________________________________

MAX1876EEG+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Switching Controllers Dual 180 Out PWM Step-Down
Lifecycle:
New from this manufacturer.
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