LT3759
22
3759fc
For more information www.linear.com/3759
For maximum efficiency, R
DS(ON)
and C
RSS
should be
minimized. From a known power dissipated in the power
MOSFET, its junction temperature can be obtained using
the following equation:
T
J
= T
A
+ P
FET
θ
JA
= T
A
+P
FET
(θ
JC
+ θ
CA
)
T
J
must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFET temperature in steady state to ensure that absolute
maximum ratings are not exceeded.
SEPIC Converter: Output Diode Selection
To maximize efficiency, a fast switching diode with a low
forward drop and low reverse leakage is desirable. The
average forward current in normal operation is equal to
the output current, and the peak current is equal to:
I
D(PEAK)
= 1+
χ
2
I
O(MAX)
1
1D
MAX
It is recommended that the peak repetitive reverse voltage
rating V
RRM
is higher than V
OUT +
V
IN(MAX)
by a safety
margin (a 10V safety margin is usually sufficient).
The power dissipated by the diode is:
P
D
= I
O(MAX)
V
D
and the diode junction temperature is:
T
J
= T
A
+P
D
R
θ
JA
The R
θJA
used in this equation normally includes the R
θJC
for the device, plus the thermal resistance from the board,
to the ambient temperature in the enclosure. T
J
must not
exceed the diode maximum junction temperature rating.
SEPIC Converter: Output and Input Capacitor Selection
The selections of the output and input capacitors of the
SEPIC converter are similar to those of the boost converter.
Please refer to the Boost Converter, Output Capacitor
Selection and Boost Converter, Input Capacitor Selection
sections.
SEPIC Converter: Selecting the DC Coupling Capacitor
The DC voltage rating of the DC coupling capacitor (C
DC
,
as shown in Figure 1) should be rated for the maximum
input voltage:
C
DC
V
IN(MAX)
C
DC
has nearly a rectangular current waveform. During
the switch off-time, the current through C
DC
is I
IN
, while
approximately –I
O
flows during the on-time. The RMS
rating of the coupling capacitor is determined by the fol-
lowing equation:
I
RMS(CDC)
I
O(MAX)
V
OUT
+ V
D
V
IN(MIN)
A low ESR and ESL, X5R or X7R ceramic capacitor works
well for C
DC
.
INVERTING CONVERTER APPLICATIONS
The LT3759 can be configured as a dual-inductor inverting
topology, as shown in Figure 9. The V
OUT
to V
IN
ratio is:
V
OUT
V
D
V
IN
=
D
1D
In continuous conduction mode (CCM).
APPLICATIONS INFORMATION
Figure 9. A Simplified Inverting Converter
R
SENSE
C
DC
V
IN
C
IN
L1
D1
C
OUT
V
OUT
3759 F09
+
GATE
GND
LT3759
SENSE
L2
M1
+
+
+
LT3759
23
3759fc
For more information www.linear.com/3759
Inverting Converter: Switch Duty Cycle and Frequency
For an inverting converter operating in CCM, the duty
cycle of the main switch can be calculated based on the
negative output voltage (V
OUT
) and the input voltage (V
IN
).
The maximum duty cycle (D
MAX
) occurs when the converter
has the minimum input voltage:
D
MAX
=
V
OUT
V
D
V
OUT
V
D
V
IN(MIN)
Inverting Converter: Inductor, Sense Resistor, Power
MOSFET, Output Diode and Input Capacitor Selections
The selections of the inductor, sense resistor, power
MOSFET, output diode and input capacitor of an inverting
converter are similar to those of the SEPIC converter. Please
refer to the corresponding SEPIC converter sections.
Inverting Converter: Output Capacitor Selection
The inverting converter requires much smaller output
capacitors than those of the boost and SEPIC converters
for similar output ripples. This is due to the fact that, in
the inverting converter, the inductor L2 is in series with the
output, and the ripple current flowing through the output
capacitors are continuous. The output ripple voltage is
produced by the ripple current of L2 flowing through the
ESR and bulk capacitance of the output capacitor:
V
OUT(PP)
= I
L2
ESR
COUT
+
1
8 f
O SC
C
OUT
After specifying the maximum output ripple, the user can
select the output capacitors according to the preceding
equation.
The ESR can be minimized by using high quality X5R or
X7R dielectric ceramic capacitors. In many applications,
ceramic capacitors are sufficient to limit the output volt-
age ripple.
The RMS ripple current rating of the output capacitor
needs to be greater than:
I
RMS(COUT)
> 0.3 DI
L2
Inverting Converter: Selecting the DC Coupling
Capacitor
The DC voltage rating of the DC coupling capacitor (C
DC
,
as shown in Figure 9) should be larger than the maximum
input voltage minus the output voltage (negative voltage):
V
CDC
> V
IN(MAX)
V
OUT
C
DC
has nearly a rectangular current waveform. During
the switch off-time, the current through C
DC
is I
IN
, while
approximately –I
O
flows during the on-time. The RMS
rating of the coupling capacitor is determined by the fol-
lowing equation:
I
RMS(CDC)
>I
O(MAX)
D
MAX
1D
MAX
A low ESR and ESL, X5R or X7R ceramic capacitor works
well for C
DC
.
Board Layout
The high speed operation of the LT3759 demands careful
attention to board layout and component placement. The
exposed pad of the package is the only GND terminal of
the IC, and is important for thermal management of the
IC. Therefore, it is crucial to achieve a good electrical and
thermal contact between the exposed pad and the ground
plane of the board. For the LT3759 to deliver its full output
power, it is imperative that a good thermal path be pro-
vided to dissipate the heat generated within the package.
It is recommended that multiple vias in the printed circuit
board be used to conduct heat away from the IC and into
a copper plane with as much area as possible.
To prevent radiation and high frequency resonance prob-
lems, proper layout of the components connected to the
IC is essential, especially the power paths with higher di/
dt. The following high di/dt loops of different topologies
should be kept as tight as possible to reduce inductive
ringing:
In boost configuration, the high di/dt loop contains the
output capacitor, the sensing resistor, the power MOSFET
and the Schottky diode.
APPLICATIONS INFORMATION
LT3759
24
3759fc
For more information www.linear.com/3759
In flyback configuration, the high di/dt primary loop
contains the input capacitor, the primary winding, the
power MOSFET and sensing resistor. The high di/dt
secondary loop contains the output capacitor, the sec-
ondary winding and the output diode.
In SEPIC configuration, the high di/dt loop contains
the power MOSFET, sense resistor, output capacitor,
Schottky diode and the coupling capacitor.
In inverting configuration, the high di/dt loop contains
power MOSFET, sense resistor, Schottky diode and the
coupling capacitor.
Check the stress on the power MOSFET by measuring its
drain-to-source voltage directly across the device terminals
(reference the ground of a single scope probe directly to
the source pad on the PC board). Beware of inductive
ringing, which can exceed the maximum specified voltage
rating of the MOSFET. If this ringing cannot be avoided,
and exceeds the maximum rating of the device, either
choose a higher voltage device or specify an avalancher-
ated power MOSFET.
The small-signal components should be placed away from
high frequency switching nodes. For optimum load regula-
tion and true remote sensing, the top of the output voltage
sensing resistor divider should connect independently to
the top of the output capacitor (Kelvin connection), staying
away from any high dV/dt traces. Place the divider resis-
tors near the LT3759 in order to keep the high impedance
FBX node short.
Figure 10 shows the suggested layout of 1.8V to 3.3V
input, 5V/2A Output Boost Converter.
APPLICATIONS INFORMATION
Figure 10. The Suggested Boost Converter Layout
3759 F10
V
OUT
L1
VIAS TO GROUND
PLANE
D1
C
OUT1
C
OUT2
C
IN
1
2
8
7
3
4
6
5
M1
R
C
R1
R2
C
SS
R
T
R3
R4
C
VCC
C
DRIVE
C
C1
C
C2
LT3759
13
2
3
1
4
5
6
10
11
12
7
8
9
R
S
R
PGOOD
V
IN
V
IN
VIAS TO V
IN
GND

LT3759HMSE#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators Boost, Flyback, SEPIC, and Inverting Controller
Lifecycle:
New from this manufacturer.
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