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STA016T
8/45
ELECTRICAL CHARACTERISTCS
(T
amb
= 25°C; R
g
= 50
Ω
unless otherwise specified)
DC OPERATING CONDITIONS
GENERAL INTERFACE ELECTRICAL CHARACTERISTICS
Note 1: The leakage currents are generally very small, < 1nA. The value given here is a maximum that can occur after an electrostatic stress
on the pin.
Note 2: Human Body Model.
DC ELECTRICAL CHARACTERISTICS
Note1: Takes into account 200mV voltage drop in both supply lines.
Note 2: X is the source/sink current under worst case conditions and is reflected in the name of the I/O cell according to the drive capability.
Note 1: Min. condition: VDD = 2.7V, 125°C Min process Max. condition: VDD = 3.6V, -20°C Max.
POWER DISSIPATION
Symbol Parameter Value Unit
V
DD
Power Supply Voltage 2.5 ± 0.25 V
V
CC
Power Supply Voltage 3.3 ± 0.3 V
PLL_V
CC
Power Supply Voltage 2.5 ± 0.25 V
Symbol Parameter Test Condition Min. Typ. Max. Unit Note
I
IL
Low Level Input
CurrentWithout pull-up device
V
i
= 0V -10 10 µA1
I
IH
High Level Input
CurrentWithout pull-up device
V
i
= V
DD
-10 10 µA1
V
esd
Electrostatic Protection Leakage < 1µA2000 V2
Symbol Parameter Test Condition Min. Typ. Max. Unit Note
V
IL
Low Level Input Voltage
0.2*V
CC
V
V
IH
High Level Input Voltage
0.8*V
CC
V
V
ol
Low Level Output Voltage I
ol
= Xma 0.4V V 1, 2
V
oh
High Level Output Voltage
0.85*V
CC
V1, 2
Symbol Parameter Test Condition Min. Typ. Max. Unit Note
I
pu
Pull-up current V
i
= 0V; pin numbers 7, 24
and 26
-25 -66 -125 µA1
R
pu
Equivalent Pull-up Resistance 50 kΩ
Symbol Parameter Test Condition Min. Typ. Max. Unit Note
P
D
Power Dissipation@ V
DD
= 2.4V
Sampling_freq ≤24 kHz t.b.d. mW
Sampling_freq ≤32 kHz t.b.d. mW
Sampling_freq ≤48 kHz t.b.d. mW
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