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SIZ900DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
www.vishay.com
4
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
Vishay Siliconix
SiZ900DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0 20 40 60 80
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 6 12 18 24 30
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 15 V
V
DS
= 7.5 V
I
D
= 18.8 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 25 °C
T= 125 °C
C
0
500
1000
1500
2000
2500
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 19.4 A
V
GS
= 10 V, 4.5 V
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
www.vishay.com
5
Vishay Siliconix
SiZ900DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 19.4 A
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s
100 ms
Limited by R
DS(on)
*
1 ms
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1 s
DC
www.vishay.com
6
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
Vishay Siliconix
SiZ900DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
10
20
30
40
50
25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ900DT-T1-GE3

Mfr. #:
Buy SIZ900DT-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 30V 24A POWERPAIR
Lifecycle:
New from this manufacturer.
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