© Semiconductor Components Industries, LLC, 2007
February, 2007 Rev. 2
1 Publication Order Number:
NCV7380/D
NCV7380
LIN Transceiver
The NCV7380 is a physical layer device for a single wire data link
capable of operating in applications where high data rate is not
required and a lower data rate can achieve cost reductions in both the
physical media components and in the microprocessor which uses
the network. The NCV7380 is designed to work in systems
developed for LIN 1.3 or LIN 2.0. The IC furthermore can be used in
ISO9141 systems.
Because of the very low current consumption of the NCV7380 in
recessive state, it’s suitable for ECU applications with low standby
current requirements, whereby no sleep/wakeup control from the
microprocessor is necessary.
Features
Operating Voltage V
S
= 7.0 to 18 V
Low Current Consumption of Typ. 24 A
LINBus Transceiver:
Slew Rate Control for Good EMC Behavior
Fully Integrated Receiver Filter
BUS Input Voltage 27 V to 40 V
Integrated Termination Resistor for LIN Slave Nodes (30 k)
Baud Rate up to 20 kBaud
Will Work in Systems Designed for either LIN 1.3 or LIN 2.0
Compatible to ISO9141 Functions
High EMI Immunity
Bus Terminals Protect Against ShortCircuits and Transients in the
Automotive Environment
Bus Pin High Impedance During Loss of Ground and Undervoltage
Conditions
Thermal Overload Protection
High Signal Symmetry for use in RC–Based Slave Nodes up to 2%
Clock Tolerance when Compared to the Master Node
"1000 V ESD Protection, Charged Device Model
NCV Prefix for Automotive and Other Applications Requiring Site
and Change Control
PbFree Packages are Available
SO8
D SUFFIX
CASE 751
PIN CONNECTIONS
Device Package Shipping
ORDERING INFORMATION
NCV7380D SO8 95 Units/Rail
MARKING
DIAGRAM
18
5
3
4
(Top View)
RxD
VCC
NC
7
6
2
VS
NC
TxD
GND
BUS
NCV7380DR2 SO8 2500 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
NCV7380DG SO8
(PbFree)
95 Units/Rail
NCV7380DR2G SO8
(PbFree)
2500 Tape & Reel
V7380 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
1
8
V7380
ALYW
G
1
8
NCV7380
http://onsemi.com
2
Figure 1. Block Diagram
VCC
Internal Supply
and
References
Biasing &
Bandgap
Thermal
Shutdown
POR
SLEW RATE
CONTROL
TxD
BUS Driver
Input
Filter
Receive
Comparator
RxD
30 K
BUS
GND
VS
NCV7380
15 K
PACKAGE PIN DESCRIPTION
Pin Symbol Description
1 RXD Receive data from BUS to microprocessor, LOW in dominant state.
2 NC No connection.
3 VCC 5.0 V supply input.
4 TXD Transmit data from microprocessor to BUS, LOW in dominant state.
5 GND Ground.
6 BUS LIN bus pin, LOW in dominant state.
7 VS Battery input voltage.
8 NC No connection.
NCV7380
http://onsemi.com
3
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC.
The maximum ratings given in the table below are
limiting values that do not lead to a permanent damage of
the device but exceeding any of these limits may do so.
Long term exposure to limiting values may effect the
reliability of the device.
OPERATING CONDITIONS
Characteristic Symbol Min Max Unit
Battery Supply Voltage (Note 1) V
S
7.0 18 V
Supply Voltage V
CC
4.5 5.5 V
Operating Ambient Temperature T
A
40 +125 °C
MAXIMUM RATINGS
Rating Symbol Condition Min Max Unit
Battery Supply Voltage V
S
t < 1 min
0.3
30 V
Load Dump, t < 500 ms 40
Supply Voltage V
CC
0.3 +7.0 V
Transient Supply Voltage V
S.tr1
ISO 7637/1 Pulse 1 (Note 2) 150 V
Transient Supply Voltage V
S..tr2
ISO 7637/1 Pulses 2 (Note 2) 100 V
Transient Supply Voltage V
S..tr3
ISO 7637/1 Pulses 3A, 3B 150 150 V
BUS Voltage V
BUS
t < 500 ms , Vs = 18 V 27
40
V
t < 500 ms ,Vs = 0 V 40
Transient Bus Voltage V
BUS..tr1
ISO 7637/1 Pulse 1 (Note 3) 150 V
Transient Bus Voltage V
BUS.tr2
ISO 7637/1 Pulses 2 (Note 3) 100 V
Transient Bus Voltage V
BUS.tr3
ISO 7637/1 Pulses 3A, 3B (Note 3) 150 150 V
DC Voltage on Pins TxD, RxD V
DC
0.3 7.0 V
ESD Capability, Charged Device Model V
ESDCDM
(Note 4) 1.0 1.0 kV
ESD Capability of RxD, TxD, V
CC
, BUS Pins
ESD Capability of V
S
Pin
V
ESDHBM
Human body model, equivalent to
discharge 100 pF with 1.5 k (Note 4)
2.0
1.5
2.0
1.5
kV
kV
Maximum Latchup Free Current at Any Pin I
LATCH
500 500 mA
Maximum Power Dissipation P
tot
At T
A
= 125°C 197 mW
Thermal Impedance
JA
In Free Air 152 °C/W
Storage Temperature T
stg
55 +150 °C
Junction Temperature T
J
40 +150 °C
LEAD TEMPERATURE SOLDERING REFLOW
Lead Free, 60 sec 150 sec above 217, 40 sec Max at Peak T
SLD
265 Peak °C
Leaded, 60 sec 150 sec above 183, 30 sec Max at Peak T
SLD
240 Peak °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
S
is the IC supply voltage including voltage drop of reverse battery protection diode, V
DROP
= 0.4 to 1.0 V, V
BAT_ECU
voltage range is
7.0 to 18 V.
2. ISO 7637 test pulses are applied to V
S
via a reverse polarity diode and > 2.0 F blocking capacitor.
3. ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1.0 nF.
4. This device incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AECQ100002 (EIA/JESD22A 114C)
ESD CDM tested per EIA/JESD22C 101C, Field Induced Model.

NCV7380DR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC TRANSCEIVER LINEAR 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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