© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 10
1 Publication Order Number:
MC14516B/D
MC14516B
Binary Up/Down Counter
The MC14516B synchronous up/down binary counter is
constructed with MOS P−channel and N−channel enhancement mode
devices in a monolithic structure.
This counter can be preset by applying the desired value, in binary,
to the Preset inputs (P0, P1, P2, P3) and then bringing the Preset
Enable (PE) high. The direction of counting is controlled by applying
a high (for up counting) or a low (for down counting) to the
UP/DOWN input. The state of the counter changes on the positive
transition of the clock input.
Cascading can be accomplished by connecting the Carry Out
to the
Carry In
of the next stage while clocking each counter in parallel. The
outputs (Q0, Q1, Q2, Q3) can be reset to a low state by applying a high
to the reset (R) pin.
This CMOS counter finds primary use in up/down and difference
counting. Other applications include: (1) Frequency synthesizer
applications where low power dissipation and/or high noise immunity
is desired, (2) Analog−to−Digital and Digital−to−Analog conversions,
and (3) Magnitude and sign generation.
Features
• Diode Protection on All Inputs
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Internally Synchronous for High Speed
• Logic Edge−Clocked Design — Count Occurs on Positive Going
Edge of Clock
• Single Pin Reset
• Asynchronous Preset Enable Operation
• Capable of Driving Two Low−Power TTL Loads or One
Low−Power Schottky Load Over the Rated Temperature Range
• These Devices are Pb−Free and are RoHS Compliant
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Parameter Symbol Value Unit
DC Supply Voltage Range V
DD
−0.5 to +18.0 V
Input or Output Voltage Range
(DC or Transient)
V
in
, V
out
−0.5 to V
DD
+ 0.5
V
Input or Output Current (DC or Transient)
per Pin
I
in
, I
out
± 10 mA
Power Dissipation, per Package (Note 1) P
D
500 mW
Ambient Temperature Range T
A
−55 to +125 °C
Storage Temperature Range T
stg
−65 to +150 °C
Lead Temperature (8−Second Soldering) T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating: Plastic “DW” Packages:
– 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guar
gainst damage due to high static voltages or electr
ields. However, precautions must be taken to avo
pplications of any voltage higher than maximum rate
oltages to this high−impedance circuit. For prope
peration, V
in
and V
out
should be constrained to th
ange V
SS
v (V
in
or V
out
) v V
DD
.
Unused inputs must always be tied to an appropria
ogic voltage level (e.g., either V
SS
or V
DD
). Unuse
utputs must be left open.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING
DIAGRAM
SOIC−16
D SUFFIX
CASE 751B
1
16
14516BG
AWLYWW
1
