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SI8421BD-D-ISR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P38
Si8410/20/21 (5 kV)
Si8422/23 (2.5 & 5 kV)
16 Rev. 1.2
Table 5. Recommended Operating Conditions
Parameter
Symbol Test Condition Min Typ Max Unit
Ambient Operating Temperature* T
A
150 Mbps, 15 pF, 5 V –40 25 125 C°
Supply Voltage V
DD1
2.70 — 5.5 V
V
DD2
2.70 — 5.5 V
*Note: The maximum ambient temperature is dependent upon data frequency, output loading, the number of operating
channels, and supply voltage.
Table 6. Regulatory Information*
CSA
The Si84xx is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 V
RMS
reinforced insulation working voltage; up to 600 V
RMS
basic insulation working voltage.
60950-1: Up to 600 V
RMS
reinforced insulation working voltage; up to 1000 V
RMS
basic insulation working volt-
age.
60601-1: Up to 125 V
RMS
reinforced insulation working voltage; up to 380 V
RMS
basic insulation working voltage.
VDE
The Si84xx is certified according to IEC 60747-5-2. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 891 V
peak
for basic insulation working voltage.
60950-1: Up to 600 V
RMS
reinforced insulation working voltage; up to 1000 V
RMS
basic insulation working volt-
age.
UL
The Si84xx is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 5000 V
RMS
isolation voltage for basic insulation.
*Note: Regulatory Certifications apply to 2.5 kV
RMS
rated devices which are production tested to 3.0 kV
RMS
for 1 sec.
Regulatory Certifications apply to 5.0 kV
RMS
rated devices which are production tested to 6.0 kV
RMS
for 1 sec.
For more information, see "6. Ordering Guide" on page 29.
Rev. 1.2 17
Si8410/20/21 (5 kV)
Si8422/23 (2.5 & 5 kV)
Table 7. Insulation and Safety-Related Specifications
Parameter Symbol Test Condition
Value
Unit
WB
SOIC-16
NB
SOIC-8
Nominal Air Gap (Clearance)
1
L(IO1) 8.0 min 4.9 min mm
Nominal External Tracking (Creepage)
1
L(IO2) 8.0 min 4.01 min mm
Minimum Internal Gap (Internal Clearance)
0.014 0.008 mm
Tracking Resistance
(Proof Tracking Index)
PTI IEC60112 600 600 V
RMS
Erosion Depth
ED 0.019 0.040 mm
Resistance (Input-Output)
2
R
IO
10
1,2
10
1,2
Capacitance (Input-Output)
2
C
IO
f = 1 MHz 2.0 1.0 pF
Input Capacitance
3
C
I
4.0 4.0 pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “7. Package Outline:
16-Pin Wide Body SOIC”, “9. Package Outline: 8-Pin Narrow Body SOIC”. VDE certifies the clearance and creepage
limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB SOIC-8 package. UL does
not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and
creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)
are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Test Conditions
Specification
NB SOIC8 WB SOIC 16
Basic Isolation Group Material Group I I
Installation Classification
Rated Mains Voltages <
150 V
RMS
I-IV I-IV
Rated Mains Voltages <
300 V
RMS
I-III I-IV
Rated Mains Voltages <
400 V
RMS
I-II I-III
Rated Mains Voltages <
600 V
RMS
I-II I-III
Si8410/20/21 (5 kV)
Si8422/23 (2.5 & 5 kV)
18 Rev. 1.2
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxx*
Parameter
Symbol Test Condition
Characteristic
Unit
WB
SOIC-16
NB SOIC-8
Maximum Working Insulation
Voltage
V
IORM
891 560 Vpeak
Input to Output Test Voltage
Method b1
(V
IORM
x1.875=V
PR
, 100%
Production Test, t
m
= 1 sec,
Partial Discharge < 5 pC)
1671 1050
Transient Overvoltage
V
IOTM
t = 60 sec 6000 4000 Vpeak
Pollution Degree
(DIN VDE 0110, Table 1)
22
Insulation Resistance at T
S
,
V
IO
=500V
R
S
>10
9
>10
9
*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
40/125/21.
Table 10. IEC Safety Limiting Values
1
Parameter
Symbol Test Condition Min Typ
Max
Unit
WB
SOIC-16
NB
SOIC-8
Case Temperature T
S
— — 150 150 °C
Safety Input, Output, or
Supply Current
I
S
JA
= 140 °C/W (NB SOIC-8),
100 °C (WB SOIC-16),
V
I
=5.5V, T
J
=150°C, T
A
=25°C
— — 220 160 mA
Device Power
Dissipation
2
P
D
— — 150 150 mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 2 and 3.
2. The Si84xx is tested with VDD1 = VDD2 = 5.5 V, T
J
=150ºC, C
L
= 15 pF, input a 150 Mbps 50% duty cycle square
wave.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P38

SI8421BD-D-ISR

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Buy SI8421BD-D-ISR
Manufacturer:
Silicon Labs
Description:
Digital Isolators 5 kV 1 forward & 1 reverse 2-channel isolator
Lifecycle:
New from this manufacturer.
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