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BUK7226-75A/C1,118

P1-P3P4-P6P7-P9P10-P12P13-P14
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1] Capped at 45 A due to bondwire.
BUK7226-75A
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2008 Product data sheet
175 °C rated Low on-state resistance
Q101 compliant Standard level compatible
12 V, 24 V and 42 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C--75V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1 and 4
[1]
--45A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --158W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C; see Figure 12 and
13
-2226mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=45A; V
sup
≤ 75 V;
R
GS
=50Ω; V
GS
=10V;
T
j(init)
=25°C; unclamped
inductive load
--215mJ
BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 2 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
2. Pinning information
3. Ordering information
4. Limiting values
[1] Capped at 45 A due to bondwire.
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT428 (DPAK)
2 D drain
3 S source
mb D mounting base;
connected to drain
3
2
mb
1
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK7226-75A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead
cropped)
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C-75V
V
DGR
drain-gate voltage R
GS
=20kΩ -75V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
= 10 V; see Figure 1 and 4
[1]
-45A
T
mb
= 100 °C; V
GS
= 10 V; see Figure 1 -38A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 μs; pulsed; see Figure 4 - 215 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 158 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=45A; V
sup
≤ 75 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
=25°C; unclamped
inductive load
- 215 mJ
E
DS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[2][3]
[4]
--J
Source-drain diode
I
S
source current T
mb
=25°C
[1]
-45A
I
SM
peak source current t
p
≤ 10 μs; pulsed; T
mb
=25°C - 215 A
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7226-75A/C1,118

Mfr. #:
Buy BUK7226-75A/C1,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 75V 45A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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