BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 6 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/μs;
V
GS
=-10V; V
DS
=30V;
T
j
=25°C
-53-ns
Q
r
recovered charge - 144 - nC
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=60V;
V
GS
=10V; seeFigure 14
-48-nC
Q
GS
gate-source charge - 7.5 - nC
Q
GD
gate-drain charge - 17 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V;
f=1MHz; T
j
=25°C;
see Figure 15
- 1789 2385 pF
C
oss
output capacitance - 382 458 pF
C
rss
reverse transfer
capacitance
- 219 300 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω;
V
GS
=10V; R
G(ext)
=10Ω;
T
j
=25°C
-14-ns
t
r
rise time - 66 - ns
t
d(off)
turn-off delay time - 61 - ns
t
f
fall time - 41 - ns
L
D
internal drain
inductance
measured from drain lead from
package to center of die;
T
j
=25°C
-2.5-nH
L
S
internal source
inductance
measured from source lead from
package to source bond pad;
T
j
=25°C
-7.5-nH
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
DS
(V)
0108462
03nb06
80
120
40
160
200
I
D
(A)
0
V
GS
(V) = 20
10
9
8
7
6
5
03nb05
V
GS
(V)
5201510
20
16
24
28
R
DSon
(mΩ)
12
T
j
=25°C; t
p
= 300ȝs
