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BUK7226-75A/C1,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 3 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[4] Refer to application note AN10273 for further information.
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
003aac178
0
20
40
60
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
(1)
03aa16
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
P
der
(%)
V
GS
10V
(1) Capped at 45 A due to bondwire.
P
der
=
P
tot
P
tot
(
25°C
)
× 100 %
003aac181
10
-1
1
10
10
2
10
-3
10
-2
10
-1
1 10
t
AV
(ms)
I
AV
(A)
(1)
(2)
(3)
(1) Singleípulse;T
j
=25°C.
(2) Singleípulse;T
j
= 150°C.
(3) Repetitive.
BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 4 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aac179
10
-1
1
10
10
2
10
3
1 10 10
2
10
3
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
1 ms
100 μs
10 μs
Limit R
DSon
= V
DS
/ I
D
(1)
T
mb
=25°C; I
DM
is single pulse
(1) Capped at 45 A due to bondwire.
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
minimum footprint; FR4 board - 70 - K/W
R
th(j-mb)
thermal resistance
from junction to
mounting base
see Figure 5 --1K/W
BUK7226-75A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 22 February 2008 5 of 13
NXP Semiconductors
BUK7226-75A
N-channel TrenchMOS standard level FET
6. Characteristics
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aac180
10
-3
10
-2
10
-1
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
0.02
single shot
0.05
0.1
0.2
t
p
T
P
t
t
p
T
δ =
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V;
T
j
=-55°C
70 - - V
I
D
=0.25mA; V
GS
=0V;
T
j
=25°C
75 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
;
T
j
= 175 °C; see Figure 11
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 11
234V
I
D
=1mA; V
DS
= V
GS
;
T
j
=-55°C; see Figure 11
--4.4V
I
DSS
drain leakage current V
DS
=75V; V
GS
=0V; T
j
=25°C - 0.05 10 μA
V
DS
=75V; V
GS
=0V;
T
j
= 175 °C
--500μA
I
GSS
gate leakage current V
DS
=0V; V
GS
=20V; T
j
=25°C - 2 100 nA
V
DS
=0V; V
GS
=-20V;
T
j
=25°C
-2100nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
= 175 °C; see Figure 12 and
13
--54mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 12
and 13
-2226mΩ
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
-0.851.2V
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BUK7226-75A/C1,118

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Buy BUK7226-75A/C1,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 75V 45A DPAK
Lifecycle:
New from this manufacturer.
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