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MRF9002NR2

P1-P3P4-P6P7-P9P10-P10
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4
RF Device Data
Freescale Semiconductor
MRF9002NR2
Figure 3. MRF9002NR2 Broadband Test Circuit Component Layout
Pin 1
MRF9002
960 MHz
RF1 INPUT
Rev. B
RF1 OUTPUT
RF2 INPUT
RF2 OUTPUT
V
GS1
V
GS2
V
DS1
V
DS2
C1 C2
C8
C16
C7
C9
L4
C10
L5
C14
L1
L2
C3
R1
R2
C13
R3
C4
C18
L3
C15
L6
C11
C17
C12
C5 C6
RF3 INPUT
RF3 OUTPUT
V
GS3
V
DS3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/‐
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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MRF9002NR2
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
15
35
0
17
G
ps
P
out
V
DS
= 26 Vdc
I
DQ
= 25 mA
f = 960 MHz
Single-Tone
G
ps
, POWER GAIN (dB)
33 19.25
31 19
29 18.75
27 18.5
25 18.25
23 18
21 17.75
19 17.5
17 17.25
19.5
2 4 6 8 10 12 14
985
25
41
925
10 dBm
V
DS
= 26 Vdc
I
DQ
= 25 mA
Single-Tone
P
out
, OUTPUT POWER (dBm)
39
37
35
33
31
29
27
975965955945935
15 dBm
P
in
= 20 dBm
P
in
, INPUT POWER (dBm)
Figure 4. Output Power and Power Gain
versus Input Power
P
out
, OUTPUT POWER (dBm)
P
out
, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
30
19.9
20.3
22
-32
-28
G
ps
IMD
P
out
= 2 W (PEP)
I
DQ
= 25 mA
f1 = 960.0 MHz, f2 = 960.1 MHz
V
DS
, DRAIN SOURCE SUPPLY (VOLTS)
Figure 6. Power Gain and Intermodulation Distortion
versus Supply Voltage
G
ps
, POWER GAIN (dB)
20.2 -29
20.1 -30
20 -31
29282726252423
INTERMODULATION DISTORTION (dBc)IMD,
40
-65
-20
5
25 mA
V
DS
= 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
P
out
, OUTPUT POWER (dBm) PEP
Figure 7. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
50 mA
75 mA
100 mA
-25
-30
-35
-40
-45
-50
-55
-60
353025201510
40
-70
0
10
3rd Order
V
DS
= 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
P
out
, OUTPUT POWER (dBm)
Figure 8. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
-10
-20
-30
-40
-50
-60
3530252015
5th Order
7th Order
f, FREQUENCY (MHz)
Figure 9. Output Power versus Frequency
40
15
23
10
100 mA
V
DS
= 26 Vdc
f = 960 MHz
Single-Tone
22
21
20
19
18
17
16
15 20 25 30 35
25 mA
75 mA
50 mA
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6
RF Device Data
Freescale Semiconductor
MRF9002NR2
TYPICAL CHARACTERISTICS
C
rss
C
iss
30
2
12
22
V
DS
, DRAIN SOURCE SUPPLY (VOLTS)
Figure 10. Capacitance versus Drain Source Voltage
C
oss
23 24 25 26 27 28 29
3
4
5
6
7
8
9
10
11
C, CAPACITANCE (pF)
210
10
9
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
6
MTTF FACTOR (HOURS X AMPS
2
)
90 110 130 150 170 190
Figure 11. MTTF Factor versus Junction Temperature
100 120 140 160 180 200
10
7
P1-P3P4-P6P7-P9P10-P10

MRF9002NR2

Mfr. #:
Buy MRF9002NR2
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors FR PWR FET ARRAY PFP-16N
Lifecycle:
New from this manufacturer.
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