OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BFG480W,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
1998 Oct 21 10
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Fig.14 Power gain and collector efficiency as a
function of load power; typical values.
Pulsed, class-AB operation; <1;2; t
p
=5ms.
f=2GHz; V
CE
= 2.4 V; I
CQ
= 1 mA; tuned at P
L
=100mW.
handbook, halfpage
10 14 18 26
16
12
4
0
8
MGR635
P
L
(dBm)
G
p
(dB)
G
p
80
60
20
0
40
22
η
C
(%)
η
C
Fig.15 Power gain and collector efficiency as a
function of load power; typical values.
Pulsed, class-AB operation; <1;2; t
p
=5ms.
f=2GHz; V
CE
= 3.6 V; I
CQ
= 1 mA; tuned at P
L
=100mW.
handbook, halfpage
10 14 18 26
16
12
4
0
8
MGR636
P
L
(dBm)
G
p
(dB)
G
p
80
60
20
0
40
22
η
C
(%)
η
C
Fig.16 Input impedance as function of frequency
(series components); typical values.
V
CE
=3.6V; I
CQ
=1mA; P
L
=100mW; T
s
60 C.
handbook, halfpage
1.8 1.85 1.9 2
10
0
8
MGR637
1.95
6
4
2
Z
i
(Ω)
f (GHz)
r
i
x
i
Fig.17 Load impedance as a function of frequency
(series components); typical values.
V
CE
=3.6V; I
CQ
=1mA; P
L
=100mW; T
s
60 C.
handbook, halfpage
1.8 1.85 1.9 2
30
0
MGR638
1.95
20
10
Z
L
(Ω)
f (GHz)
R
L
X
L
1998 Oct 21 11
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Fig.18 Common emitter test circuit for class-AB operation at 2 GHz.
List of components used in test circuit (see Figs 18 and 19)
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (
r
=6.15,
tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C5 multilayer ceramic chip capacitor; note 1 24 pF
C2, C4 multilayer ceramic chip capacitor; note 1 2 pF
C3, C6 multilayer ceramic chip capacitor, note 1 15 pF
C7 multilayer ceramic chip capacitor; note 1 1 nF
L1, L4 stripline; note 2 100 18 x 0.2 mm
L2 stripline; note 2 50 5x0.8mm
L3 stripline; note 2 50 6x0.8mm
L5 Grade 4S2 Ferroxcube chip bead 4330 030 36300
R1 metal film resistor 220 ; 0.4 W
R2, R3 metal film resistor 10 ; 0.4 W
TR1 NPN transistor BC817 9335 895 20215
1998 Oct 21 12
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
Fig.19 Printed-circuit board and component layout for 2 GHz class-AB test circuit in Fig.18.
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
handbook, full pagewidth
MBK827
45
35
C4
C6
C7R3
R2
R1
TR1
C5
L3
L4
L5
output
C2
L1
L2
input
C1
C3
DUT
V
C
V
S
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

BFG480W,135

Mfr. #:
Buy BFG480W,135
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 4.5V 250mA 360mW 40 21GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet