1998 Oct 21 4
NXP Semiconductors Product specification
NPN wideband transistor BFG480W
CHARACTERISTICS
T
j
=25C unless otherwise specified.
Notes
1. G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
=MSG; seeFigs6,7and8.
2. Z
S
is optimized for noise; Z
L
is optimized for gain.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage I
C
=50A; I
E
=0 14.5 V
V
(BR)CEO
collector-emitter breakdown voltage I
C
=5mA; I
B
=0 4.5 V
V
(BR)EBO
emitter-base breakdown voltage I
E
=100A; I
C
=0 1 V
I
CBO
collector-base leakage current V
CE
=5V; V
BE
=0 70 nA
h
FE
DC current gain I
C
=80mA; V
CE
= 2 V; see Fig.3 40 60 100
C
c
collector capacitance I
E
=i
e
=0; V
CB
=2V; f=1MHz 1.4 pF
C
e
emitter capacitance I
C
=i
c
=0; V
EB
=0.5V; f=1MHz 2.2 pF
C
re
feedback capacitance I
C
=0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
340 fF
f
T
transition frequency I
C
=80mA; V
CE
=2V; f=2GHz;
T
amb
=25C; see Fig.5
21 GHz
G
max
maximum power gain; note 1 I
C
=80mA; V
CE
=2V; f=2GHz;
T
amb
=25C; seeFigs7and8
16 dB
insertion power gain I
C
=80mA; V
CE
=2V; f=2GHz;
T
amb
=25C; see Fig.8
12 dB
F noise figure I
C
=8mA; V
CE
= 2 V; f = 900 MHz;
S
=
opt
; see Fig.13
1.2 dB
I
C
=8mA; V
CE
=2V; f=2GHz;
S
=
opt
; see Fig.13
1.8 dB
P
L1
output power at 1 dB gain
compression
Class-AB; <1:2; t
p
=5ms;
V
CE
=3.6V; I
CQ
=1mA; f=2GHz
20 dBm
ITO third order intercept point I
C
=80mA; V
CE
=2V; f=2GHz;
Z
S
=Z
Sopt
; Z
L
=Z
Lopt
; note 2
28 dBm
