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BFG480W,135
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
1998 Oct 21
7
NXP Semico
nductors
Product specification
NPN wideband transistor
BFG480W
Fig.9 Common emitter input reflection coef
ficient (S
11
); typical values.
I
C
=8
0m
A
;
V
CE
=2V
;
Z
o
=5
0
handbook, full pagewidth
MGR630
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2
0.5
1
2
5
180
°
−
135
°
−
90
°
−
45
°
0
°
45
°
90
°
135
°
40 MHz
3 GHz
Fig.10 Common emitter forwar
d transmission coeffici
ent (S
21
); typical values.
I
C
=8
0m
A
;
V
CE
=2V
.
handbook, full pagewidth
MGR631
25
20
15
10
5
180
°
−
135
°
−
90
°
−
45
°
0
°
45
°
90
°
135
°
40 MHz
3 GHz
1998 Oct 21
8
NXP Semico
nductors
Product specification
NPN wideband transistor
BFG480W
I
C
=8
0m
A
;
V
CE
=2V
.
Fig.11 Common emi
tter revers
e transmission coefficient (S
12
); typical values.
handbook, full pagewidth
MGR632
0.5
0.4
0.3
0.2
0.1
180
°
−
135
°
−
90
°
−
45
°
0
°
45
°
90
°
135
°
40 MHz
3 GHz
Fig.12 Common emitter output
reflection coefficient (S
22
); typical values.
I
C
=8
0m
A
;
V
CE
=2V
;
Z
o
=5
0
handbook, full pagewidth
MGR633
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2
0.5
1
2
5
180
°
−
135
°
−
90
°
−
45
°
0
°
45
°
90
°
135
°
40 MHz
3 GHz
1998 Oct 21
9
NXP Semico
nductors
Product specification
NPN wideband transistor
BFG480W
Noise data
V
CE
= 2 V
; typica
l values.
f
(MHz)
I
C
(mA)
F
min
(dB)
mag
angle
r
n
(
)
900
2
1.1
0.41
96.1
0.21
4
1.1
0.31
106.6
0.14
6
1.2
0.27
1
18.4
0.12
8
1.2
0.26
131.7
0.10
10
1.3
0.28
143.2
0.10
20
1.6
0.39
166.2
0.07
40
2.0
0.49
176.0
0.07
60
2.3
0.57
179.5
0.07
80
2.9
0.45
177.3
0.18
2
000
2
2.4
0.57
171.9
0.09
4
2.0
0.49
178.9
0.08
61
.
8
0
.
4
6
175.7
0.09
81
.
8
0
.
4
4
171.7
0.09
10
1.8
0.43
168.4
0.09
12
1.8
0.44
165.3
0.10
14
1.8
0.44
163.7
0.10
20
1.9
0.46
158.3
0.1
1
40
2.3
0.52
150.2
0.14
60
2.6
0.56
147.7
0.18
80
2.8
0.60
146.1
0.22
Fig.13
Minimum noise figure as a function of
collector current
;
typical values.
V
CE
=2V
.
handbook, halfpage
02
0
4
0
8
0
4
3
1
0
2
MGR634
I
C
(mA)
F
min
(dB)
60
900 MHz
2 GHz
APPLICATION INFORMATION
RF perfor
mance at T
s
60
C in a co
mmon emitter test c
ircuit (se
e Figs 18 a
nd 19).
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(mA)
P
L
(mW)
G
p
(dB)
C
(%)
Pulsed; class-AB;
<1:2
;
t
p
= 5 ms
2
3.6
1
100
typ. 13.5
typ
. 45
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BFG480W,135
Mfr. #:
Buy BFG480W,135
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 4.5V 250mA 360mW 40 21GHz
Lifecycle:
New from this manufacturer.
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