MT16VDDF12864AY-40BJ1

PDF: 09005aef82c34cfe/Source: 09005aef82c34cc5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDF16C64_128x64A.fm - Rev. B 11/07 EN
10 ©2007 Micron Technology, Inc. All rights reserved
512MB, 1GB (x64, DR) 184-Pin DDR SDRAM UDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Serial Presence-Detect Data
For the latest serial presence-detect data, refer to Microns SPD page:
www.micron.com/SPD.
Table 11: Serial Presence-Detect EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage VDDSPD 2.3 3.6 V
Input high voltage: Logic 1; All inputs VIH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs V
IL –1.0 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA VOL –0.4V
Input leakage current: VIN = GND to VDD ILI –10µA
Output leakage current: V
OUT = GND to VDD ILO –10µA
Standby current: SCL = SDA = V
DD - 0.3V; All other inputs = VSS or VDD ISB –30µA
Power supply current: SCL clock frequency = 100 kHz ICC –2.0mA
Table 12: Serial Presence-Detect EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
Clock/data fall time
t
F 300 ns 2
Clock/data rise time
t
R 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
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prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respec-
tive owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although
considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
512MB, 1GB (x64, DR) 184-Pin DDR SDRAM UDIMM
Module Dimensions
PDF: 09005aef82c34cfe/Source: 09005aef82c34cc5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDF16C64_128x64A.fm - Rev. B 11/07 EN
11 ©2007 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 3: 184-Pin DDR UDIMM
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for addi-
tional design dimensions.
25.53 (1.005)
25.27 (0.995)
Pin 1
17.78 (0.07)
TYP
2.5 (0.98) D
(2X)
2.3 (0.91) TYP
6.35 (0.25) TYP
120.65 (4.75)
TYP
1.27 (0.05)
TYP
2.21 (0.087) TYP
1.02 (0.04)
TYP
2.0 (0.79) R
(4X)
0.9 (0.035) R
Pin 92
Front view
Back view
1.37 (0.054)
1.17 (0.046)
133.50 (5.256)
133.20 (5.244)
64.77 (2.55)
TYP
49.53 (1.95)
TYP
Pin 184
Pin 93
2.92 (0.115) TYP
10.0 (0.394)
TYP
4.0 (0.157)
MAX
U1 U2 U3 U4 U5 U6 U7 U8
U10 U11 U12 U13 U14 U15 U16 U17
U19
73.28 (2.885)
TYP
1.0 (0.039) TYP

MT16VDDF12864AY-40BJ1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 1GB 184UDIMM
Lifecycle:
New from this manufacturer.
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