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AD8352ACPZ-R7

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
AD8352
Rev. B | Page 3 of 20
SPECIFICATIONS
V
S
= 5 V, R
L
= 200 Ω differential, R
G
= 118 Ω (A
V
= 10 dB), f = 100 MHz, T = 25°C; parameters specified differentially (in/out), unless
otherwise noted. C
D
and R
D
are selected for differential broadband operation (see Table 5 and Table 6).
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth A
V
= 6 dB, V
OUT
≤ 1.0 V p-p 2500 MHz
A
V
= 10 dB, V
OUT
≤ 1.0 V p-p 2200 MHz
A
V
= 14 dB, V
OUT
≤ 1.0 V p-p 1800 MHz
Bandwidth for 0.1 dB Flatness 3 dB ≤ A
V
≤ 20 dB, V
OUT
≤ 1.0 V p-p 190 MHz
Bandwidth for 0.2 dB Flatness 3 dB ≤ A
V
≤ 20 dB, V
OUT
≤ 1.0 V p-p 300 MHz
Gain Accuracy Using 1% resistor for R
G
, 0 dB ≤ A
V
≤ 20 dB ±1 dB
Gain Supply Sensitivity V
S
± 5% 0.06 dB/V
Gain Temperature Sensitivity −40°C to +85°C 4 mdB/°C
Slew Rate R
L
= 1 kΩ, V
OUT
= 2 V step 9 V/ns
R
L
= 200 Ω, V
OUT
= 2 V step 8 V/ns
Settling Time 2 V step to 1% <2 ns
Overdrive Recovery Time V
IN
= 4 V to 0 V step, V
OUT
≤ ±10 mV <3 ns
Reverse Isolation (S12) −80 dB
INPUT/OUTPUT CHARACTERISTICS
Common-Mode Nominal VCC/2 V
Voltage Adjustment Range 1.2 to 3.8 V
Maximum Output Voltage Swing 1 dB compressed 6 V p-p
Output Common-Mode Offset Referenced to VCC/2 −100 +20 mV
Output Common-Mode Drift −40°C to +85°C 0.25 mV/°C
Output Differential Offset Voltage −20 +20 mV
Common-Mode Rejection Ratio (CMRR) 57 dB
Output Differential Offset Drift −40°C to +85°C 0.15 mV/°C
Input Bias Current ±5 µA
Input Resistance 3 kΩ
Input Capacitance (Single Ended) 0.9 pF
Output Resistance 100 Ω
Output Capacitance 3 pF
POWER INTERFACE
Supply Voltage 3 5 5.5 V
ENB Threshold 1.5 V
ENB Input Bias Current ENB at 3 V 75 nA
ENB at 0.6 V −125 µA
Quiescent Current ENB at 3 V 35 37 39 mA
ENB at 0.6 V 5.3 mA
AD8352
Rev. B | Page 4 of 20
NOISE DISTORTION SPECIFICATIONS
V
S
= 5 V, R
L
= 200 Ω differential, R
G
= 118 Ω (A
V
= 10 dB), V
OUT
= 2 V p-p composite, T = 25°C; parameters specified differentially, unless
otherwise noted. C
D
and R
D
are selected for differential broadband operation (see Table 5 and Table 6). See the Applications Information
section for single-ended-to-differential performance characteristics.
Table 2.
Parameter Conditions Min Typ Max Unit
10 MHz
Second/Third Harmonic Distortion
1
R
L
= 1 kΩ, V
OUT
= 2 V p-p −88/−95 dBc
R
L
= 200 Ω, V
OUT
= 2 V p-p −86/−82 dBc
Output Third-Order Intercept R
L
= 200 Ω, f
1
= 9.5 MHz, f
2
= 10.5 MHz 38 dBm
Third-Order IMD
R
L
= 1 kΩ, f
1
= 9.5 MHz, f
2
= 10.5 MHz,
V
OUT
= 2 V p-p composite
−86 dBc
R
L
= 200 Ω, f
1
= 9.5 MHz, f
2
= 10.5 MHz,
V
OUT
= 2 V p-p composite
−81 dBc
Noise Spectral Density (RTI) 2.7 nV/√Hz
1 dB Compression Point (RTO) 15.7 dBm
70 MHz
Second/Third Harmonic Distortion R
L
= 1 kΩ, R
G
= 178 Ω, V
OUT
= 2 V p-p −83/−84 dBc
R
L
= 200 Ω, R
G
= 115 Ω, V
OUT
= 2 V p-p −84/−82 dBc
Output Third-Order Intercept R
L
= 200 Ω, f
1
= 69.5 MHz, f
2
= 70.5 MHz 40 dBm
Third-Order IMD
R
L
= 1 kΩ, f
1
= 69.5 MHz, f
2
= 70.5 MHz,
V
OUT
= 2 V p-p composite
−91 dBc
R
L
= 200 Ω, f
1
= 69.5 MHz, f
2
= 70.5 MHz,
V
OUT
= 2 V p-p composite
−83 dBc
Noise Spectral Density (RTI) 2.7 nV/√Hz
1 dB Compression Point (RTO) 15.7 dBm
100 MHz
Second/Third Harmonic Distortion R
L
= 1 kΩ, V
OUT
= 2 V p-p −83/−83 dBc
R
L
= 200 Ω, V
OUT
= 2 V p-p −84/−82 dBc
Output Third-Order Intercept R
L
= 200 Ω, f
1
= 99.5 MHz, f
2
= 100.5 MHz 40 dBm
Third-Order IMD
R
L
= 1 kΩ, f
1
= 99.5 MHz, f
2
= 100.5 MHz,
V
OUT
= 2 V p-p composite
−91 dBc
R
L
= 200 Ω, f
1
= 99.5 MHz, f
2
= 100.5 MHz,
V
OUT
= 2 V p-p composite
−84 dBc
Noise Spectral Density (RTI) 2.7 nV/√Hz
1 dB Compression Point (RTO) 15.6 dBm
140 MHz
Second/Third Harmonic Distortion R
L
= 1 kΩ, V
OUT
= 2 V p-p −83/−82 dBc
R
L
= 200 Ω, V
OUT
= 2 V p-p −82/−84 dBc
Output Third-Order Intercept R
L
= 200 Ω, f
1
= 139.5 MHz, f
2
= 140.5 MHz 41 dBm
Third-Order IMD
R
L
= 1 kΩ, f
1
= 139.5 MHz, f
2
= 140.5 MHz,
V
OUT
= 2 V p-p composite
−89 dBc
R
L
= 200 Ω, f
1
= 139.5 MHz, f
2
= 140.5 MHz,
V
OUT
= 2 V p-p composite
−85 dBc
Noise Spectral Density (RTI) 2.7 nV/√Hz
1 dB Compression Point (RTO) 15.5 dBm
AD8352
Rev. B | Page 5 of 20
Parameter Conditions Min Typ Max Unit
190 MHz
Second/Third Harmonic Distortion R
L
= 1 kΩ, V
OUT
= 2 V p-p −82/−85 dBc
R
L
= 200 Ω, V
OUT
= 2 V p-p −81/−87 dBc
Output Third-Order Intercept R
L
= 200 Ω, f
1
= 180.5 MHz, f
2
= 190.5 MHz 39 dBm
Third-Order IMD
R
L
= 1 kΩ, f
1
= 180.5 MHz, f
2
= 190.5 MHz,
V
OUT
= 2 V p-p composite
−83 dBc
R
L
= 200 Ω, f
1
= 180.5 MHz, f
2
= 190.5 MHz,
V
OUT
= 2 V p-p composite
−81 dBc
Noise Spectral Density (RTI) 2.7 nV/√Hz
1 dB Compression Point (RTO) 15.4 dBm
240 MHz
Second/Third Harmonic Distortion R
L
= 1 kΩ, V
OUT
= 2 V p-p −82/−76 dBc
R
L
= 200 Ω, V
OUT
= 2 V p-p −80/−73 dBc
Output Third-Order Intercept R
L
= 200 Ω, f
1
= 239.5 MHz, f
2
= 240.5 MHz 36 dBm
Third-Order IMD
R
L
= 1 kΩ, f
1
= 239.5 MHz, f
2
= 240.5 MHz,
V
OUT
= 2 V p-p composite
−85 dBc
R
L
= 200 Ω, f
1
= 239.5 MHz, f
2
= 240.5 MHz,
V
OUT
= 2 V p-p composite
−77 dBc
Noise Spectral Density (RTI) 2.7 nV/√Hz
1 dB Compression Point (RTO) 15.3 dBm
380 MHz
Second/Third Harmonic Distortion
2
R
L
= 1 kΩ, V
OUT
= 2 V p-p −72/−68 dBc
R
L
= 200 Ω, V
OUT
= 2 V p-p −74/−69 dBc
Output Third-Order Intercept R
L
= 200 Ω, f
1
= 379.5 MHz, f
2
= 380.5 MHz 33 dBm
Third-Order IMD
R
L
= 1 kΩ, f
1
= 379.5 MHz, f
2
= 380.5 MHz,
V
OUT
= 2 V p-p composite
−74 dBc
R
L
= 200 Ω, f
1
= 379.5 MHz, f
2
= 380.5 MHz,
V
OUT
= 2 V p-p composite
−70 dBc
Noise Spectral Density (RTI) 2.7 nV/√Hz
1 dB Compression Point (RTO) 14.6 dBm
500 MHz
Second/Third Harmonic Distortion
2
R
L
= 200 Ω, V
OUT
= 2 V p-p −71/−64 dBc
Output Third-Order Intercept R
L
= 200 Ω, f
1
= 499.5 MHz, f
2
= 500.5 MHz 28 dBm
Third-Order IMD
R
L
= 200 Ω, f
1
= 499.5 MHz, f
2
= 500.5 MHz,
V
OUT
= 2 V p-p composite
−61 dBc
Noise Spectral Density (RTI) 2.7 nV/√Hz
1 dB Compression Point (RTO) 13.9 dBm
1
When using the evaluation board at frequencies below 50 MHz, replace the Output Balun T1 with a transformer, such as Mini-Circuits® ADT1-1WT to obtain the low
frequency balance required for differential HD2 cancellation.
2
C
D
and R
D
can be optimized for broadband operation below 180 MHz. For operation above 300 MHz, C
D
and R
D
components are not required.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

AD8352ACPZ-R7

Mfr. #:
Buy AD8352ACPZ-R7
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier 2 GHZ Low Distortion RF/IF
Lifecycle:
New from this manufacturer.
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