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BUK9529-100B,127

P1-P3P4-P6P7-P9P10-P12P13-P14
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
BUK9529-100B
N-channel TrenchMOS logic level FET
Rev. 02 — 9 February 2011 Product data sheet
TO-220AB
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
=5V; T
mb
=25°C;
see Figure 1
; see Figure 3
--46A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --157W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C
- 2227mΩ
V
GS
=5V; I
D
=25A;
T
j
=25°C; see Figure 11;
see Figure 12
- 2429mΩ
BUK9529-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 9 February 2011 2 of 13
NXP Semiconductors
BUK9529-100B
N-channel TrenchMOS logic level FET
2. Pinning information
3. Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=46A; V
sup
≤ 100 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
--152mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=5V; I
D
=25A;
V
DS
=80V; T
j
=25°C;
see Figure 13
-13-nC
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT78A (TO-220AB)
2 D drain
3Ssource
mb D mounting base; connected to
drain
12
mb
3
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK9529-100B TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78A
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK9529-100B,127

Mfr. #:
Buy BUK9529-100B,127
Manufacturer:
Nexperia
Description:
MOSFET N-CH 100V 46A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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