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BUK9529-100B,127

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK9529-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 9 February 2011 3 of 13
NXP Semiconductors
BUK9529-100B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage R
GS
=20kΩ - 100 V
V
GS
gate-source voltage -15 15 V
I
D
drain current T
mb
=25°C; V
GS
=5V; see Figure 1;
see Figure 3
-46A
T
mb
=100°C; V
GS
=5V; see Figure 1 -32A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
see Figure 3
- 186 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 157 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 46 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 186 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=46A; V
sup
≤ 100 V; R
GS
=50Ω;
V
GS
=5V; T
j(init)
= 25 °C; unclamped
- 152 mJ
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK9529-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 9 February 2011 4 of 13
NXP Semiconductors
BUK9529-100B
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03nm54
V
DS
(V)
1 10
3
10
2
10
10
2
10
10
3
I
D
(A)
1
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10
μ
s
100
μ
s
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from
junction to mounting base
see Figure 4 --0.95K/W
R
th(j-a)
thermal resistance from
junction to ambient
vertical in still air - 60 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03nm55
t
p
(s)
10
−6
10
−1
110
−2
10
−3
10
−5
10
−4
10
−1
10
−2
1
Z
th(j-mb)
(K/W)
10
−3
single shot
0.2
0.1
0.05
0.02
δ = 0.5
t
p
t
p
T
P
t
T
δ =
BUK9529-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 9 February 2011 5 of 13
NXP Semiconductors
BUK9529-100B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
= 25 °C 100 - - V
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 89 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10
1.1 1.5 2 V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--2.3V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10
0.5--V
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=100V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
GS
=15V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-15V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=25A; T
j
=25°C --32mΩ
V
GS
=5V; I
D
=25A; T
j
= 175 °C;
see Figure 11; see Figure 12
--75mΩ
V
GS
=10V; I
D
=25A; T
j
= 25 °C - 22 27 mΩ
V
GS
=5V; I
D
=25A; T
j
=25°C;
see Figure 11; see Figure 12
- 2429mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=80V; V
GS
=5V;
T
j
=25°C; see Figure 13
-33-nC
Q
GS
gate-source charge - 7 - nC
Q
GD
gate-drain charge - 13 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 14
- 3270 4360 pF
C
oss
output capacitance - 236 283 pF
C
rss
reverse transfer
capacitance
- 103 141 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=5V;
R
G(ext)
=10Ω; T
j
=25°C
-30-ns
t
r
rise time - 86 - ns
t
d(off)
turn-off delay time - 96 - ns
t
f
fall time - 46 - ns
L
D
internal drain
inductance
from contact screw on mounting base to
centre of die; T
j
=25°C
-3.5-nH
from drain lead 6 mm from package to
centre of die; T
j
=25°C
-4.5-nH
L
S
internal source
inductance
from source lead to source bond pad;
T
j
=25°C
-7.5-nH
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK9529-100B,127

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Buy BUK9529-100B,127
Manufacturer:
Nexperia
Description:
MOSFET N-CH 100V 46A TO220AB
Lifecycle:
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