BUK9529-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 9 February 2011 6 of 13
NXP Semiconductors
BUK9529-100B
N-channel TrenchMOS logic level FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-114-ns
Q
r
recovered charge - 196 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
03nm51
0
50
100
150
0246810
V
DS
(V)
I
D
(A)
2.6
2.8
3
3.2
3.6
3.8
4
5
10
Label is V
GS
(V)
3.4
03nm50
20
25
30
35
40
0 5 10 15
V
GS
(V)
R
DSon
(mΩ)
03nm48
0
20
40
60
80
0 25 50 75 100
I
D
(A)
g
fs
(S)
03ng53
V
GS
(V)
0321
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
