25C160/P Datasheet 25LC160T-I/SN, 25AA160/SN, 25C160/P | P1-P3

 1997-2012 Microchip Technology Inc. DS21231E-page 1

25AA160/25LC160/25C160

Device Selection Table

Features:

• Low-power CMOS technology:

- Write current: 3 mA maximum

- Read current: 500 A typical

- Standby current: 500 nA typical

• 2048 x 8-bit organization

• 16 byte page

• Write cycle time: 5 ms max.

• Self-timed erase and write cycles

• Block write protection:

- Protect none, 1/4, 1/2 or all of array

• Built-in write protection:

- Power on/off data protection circuitry

- Write enable latch

- Write-protect pin

• Sequential read

• High reliability:

- Endurance: 1 M cycles

- Data retention: > 200 years

- ESD protection: > 4000V

• 8-pin PDIP and SOIC packages

• Temperature ranges supported:

Description:

The Microchip Technology Inc. 25AA160/25LC160/

25C160 (25XX160

) are 16 Kbit Serial Electrically

Erasable PROMs. The memory is accessed via a

simple Serial Peripheral Interface (SPI) compatible

serial bus. The bus signals required are a clock input

(SCK) plus separate data in (SI) and data out (SO)

lines. Access to the device is controlled through a Chip

Select (CS

) input.

Communication to the device can be paused via the

hold pin (HOLD

). While the device is paused, transi-

tions on its inputs will be ignored, with the exception of

chip select, allowing the host to service higher priority

interrupts.

Package Types

Block Diagram

Part

Number

VCC

Range

Max Clock

Frequency

Temp

Ranges

25AA160 1.8-5.5V 1 MHz I

25LC160 2.5-5.5V 2 MHz I

25C160 4.5-5.5V 3 MHz I,E

- Industrial (I): -40Cto +85C

- Automotive (E) (25C160): -40°C to +125°C

25XX160

VSS

HOLD

SCK

PDIP/SOIC

SCK

HOLD

Status

I/O Control

Memory

Control

Logic

Dec

HV Generator

EEPROM

Array

Page Latches

Y Decoder

Sense Amp.

R/W Control

Logic

VCC

VSS

16K SPI Bus Serial EEPROM

Not recommended for new designs –

Please use 25AA160A/B or 25LC160A/B.

25AA160/25LC160/25C160

DS21231E-page 2  1997-2012 Microchip Technology Inc.

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

(†)

VCC.............................................................................................................................................................................7.0V

All inputs and outputs w.r.t. V

SS ........................................................................................................ -0.6V to VCC + 1.0V

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias...............................................................................................................-40°C to 125°C

Soldering temperature of leads (10 seconds) .......................................................................................................+300°C

ESD protection on all pins......................................................................................................................................... 4 KV

1.1 DC Characteristics

† NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended

period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I): T

A = -40°C to +85°C VCC = 1.8V to 5.5V

Automotive (E): T

A = -40°C to +125°C VCC = 4.5V to 5.5V (25C160 only)

Param.

No.

Sym. Characteristics Min. Max. Units Conditions

D1 V

IH1 High-level input

voltage

2.0 VCC+1 V VCC2.7V (Note)

D2 VIH2 0.7 VCC VCC+1 V VCC< 2.7V (Note)

D3 VIL1 Low-level input

voltage

-0.3 0.8 V VCC2.7V (Note)

D4 V

IL2 -0.3 0.3 VCC VVCC < 2.7V (Note)

D5 VOL Low -level output

voltage

—0.4VIOL = 2.1 mA

D6 VOL —0.2VIOL = 1.0 mA, VCC < 2.5V

D7 V

OH High-level output

voltage

VCC -0.5 — V IOH = -400 A

D8 I

LI Input leakage current -10 10 ACS = VCC, VIN = VSS TO VCC

D9 ILO Output leakage

current

-10 10 ACS = VCC, VOUT = VSS TO VCC

D10 CINT Internal Capacitance

(all inputs and

outputs)

—7pFTA = 25°C, CLK = 1.0 MHz,

CC = 5.0V (Note)

D11 I

CC Read

Operating Current

—

500

A

VCC = 5.5V; FCLK = 3.0 MHz;

SO = Open

CC = 2.5V; FCLK = 2.0 MHz;

SO = Open

D12 I

CC Write —

—

VCC = 5.5V

CC = 2.5V

D13 I

CCS Standby Current —

—

A

CS = VCC = 5.5V, Inputs tied to VCC or

CS = VCC = 2.5V, Inputs tied to VCC or

Note: This parameter is periodically sampled and not 100% tested.

 1997-2012 Microchip Technology Inc. DS21231E-page 3

25AA160/25LC160/25C160

1.2 AC Characteristics

AC CHARACTERISTICS

Industrial (I): T

A = -40°C to +85°C VCC = 1.8V to 5.5V

Automotive (E): T

A = -40°C to +125°C VCC = 4.5V to 5.5V (25C160 only)

Param.

No.

Sym. Characteristic Min. Max. Units Conditions

CLK Clock Frequency —

—

MHz

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

CSS CS Setup Time 100

250

500

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

CSH CS Hold Time 150

250

475

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

CSD CS Disable Time 500 — ns —

SU Data Setup Time 30

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

HD Data Hold Time 50

100

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

R CLK Rise Time — 2 s (Note 1)

F CLK Fall Time — 2 s (Note 1)

HI Clock High Time 150

230

475

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

10 T

LO Clock Low Time 150

230

475

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

11 T

CLD Clock Delay Time 50 — ns —

12 T

CLE Clock Enable Time 50 — ns —

13 T

V Output Valid from Clock

Low

—

150

230

475

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

14 T

HO Output Hold Time 0 — ns (Note 1)

15 T

DIS Output Disable Time —

—

200

250

500

CC = 4.5V to 5.5V (Note 1)

CC = 2.5V to 4.5V (Note 1)

CC = 1.8V to 2.5V (Note 1)

16 T

HS HOLD Setup Time 100

100

200

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

17 T

HH HOLD Hold Time 100

100

200

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

18 T

HZ HOLD Low to Output High-

100

150

200

—

VCC = 4.5V to 5.5V (Note 1)

CC = 2.5V to 4.5V (Note 1)

CC = 1.8V to 2.5V (Note 1)

19 T

HV HOLD High to Output Valid 100

150

200

—

VCC = 4.5V to 5.5V

CC = 2.5V to 4.5V

CC = 1.8V to 2.5V

20 T

WC Internal Write Cycle Time — 5 ms —

21 — Endurance 1 M — E/W

Cycles

(Note 2)

Note 1: This parameter is periodically sampled and not 100% tested.

2: This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please

consult the Total Endurance

™

Model which can be obtained from Microchip’s web site at: www.microchip.com.

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P22

25C160/P

Mfr. #:

Buy 25C160/P

Manufacturer:

Microchip Technology

Description:

EEPROM 2kx8 5V

Lifecycle:

New from this manufacturer.

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25C160/P

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