MRF6S23140HR3 MRF6S23140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
−18
−9
−12
−15
24302270
IRL
G
ps
ACPR
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W- CDMA Broadband Performance @ P
out
= 28 Watts Avg.
2410239023702350233023102290
15.6
15.5
−42
28
27
26
−36
−40
η
D
, DRAIN
EFFICIENCY (%)
η
D
15.4
15.3
15.2
15
14.8
14.9
15.1
−38
−34
25
−6
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
−18
−9
−12
−15
24302270
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W- CDMA Broadband Performance @ P
out
= 56 Watts Avg.
2410239023702350233023102290
15.1
15
−33
38
37
36
−27
−31
η
D
, DRAIN
EFFICIENCY (%)
η
D
14.9
14.8
14.7
14.5
14.3
14.4
14.6
−29
−25
35
−6
Figure 5. Two-Tone Power Gain versus
Output Power
100
11
18
1
I
DQ
= 1950 mA
1625 mA
P
out
, OUTPUT POWER (WATTS) PEP
16
15
14
10 300
G
ps
, POWER GAIN (dB)
13
1300 mA
975 mA
650 mA
V
DD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−50
1
I
DQ
= 650 mA
P
out
, OUTPUT POWER (WATTS) PEP
100
−20
−30
−40
−60
V
DD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
−10
1625 mA
975 mA
1300 mA
17
12
300
V
DD
= 28 Vdc
P
out
= 28 W (Avg.)
I
DQ
= 1300 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
V
DD
= 28 Vdc
P
out
= 56 W (Avg.)
I
DQ
= 1300 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
1950 mA
