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MRF6S23140HR3

P1-P3P4-P6P7-P9P10-P12
MRF6S23140HR3 MRF6S23140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
300
11
17
0.5
0
60
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus Output Power
V
DD
= 28 Vdc
I
DQ
= 1300 mA
f = 2350 MHz
T
C
= −30_C
25_C
−30_C
10010
16
15
14
13
12
50
40
30
20
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
η
D
, DRAIN EFFICIENCY (%)
η
D
G
ps
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
250
11
16
0 20050
12
100 150
14
13
15
I
DQ
= 1300 mA
f = 2350 MHz
85_C
25_C
85_C
28 V
32 V
Figure 12. MTTF Factor versus Junction Temperature
1
V
DD
= 24 V
250
10
8
90
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 28 W Avg., and η
D
= 25%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
10
7
10
6
10
5
110 130 150 170 190
MTTF (HOURS)
210 230
8
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
W- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single- Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHz
Channel BW
−IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
−ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
(dB)
+20
+30
0
−10
−40
−50
−60
−70
−80
−20
20515100−5−10−15−20−25 25
−30
MRF6S23140HR3 MRF6S23140HSR3
9
RF Device Data
Freescale Semiconductor
Z
o
= 25 Ω
Z
load
f = 2300 MHz
f = 2400 MHz
Z
source
f = 2400 MHz
f = 2300 MHz
V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 28 W Avg.
f
MHz
Z
source
W
Z
load
W
2300 12.92 + j6.65 1.05 - j2.88
2310 13.06 + j6.73 1.04 - j2.82
2320 13.21 + j6.80 1.03 - j2.76
2330 13.37 + j6.87 1.01 - j2.70
2340 13.53 + j6.94 1.00 - j2.64
2350 13.70 + j7.01 0.99 - j2.58
2360 13.88 + j7.08 0.97 - j2.52
2370 14.06 + j7.14 0.96 - j2.46
2380 14.25 + j7.21 0.95 - j2.40
2390 14.45 + j7.27 0.94 - j2.34
2400 14.66 + j7.33 0.93 - j2.28
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 15. Series Equivalent Source and Load Impedance
P1-P3P4-P6P7-P9P10-P12

MRF6S23140HR3

Mfr. #:
Buy MRF6S23140HR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6 2.3GHZ 28W
Lifecycle:
New from this manufacturer.
Delivery:
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