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BFU630F,115

P1-P3P4-P6P7-P9P10-P12
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.85 dB at 2.4 GHz
High maximum stable gain 26 dB at 1.8 GHz
40 GHz f
T
silicon technology
1.3 Applications
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ku band oscillators DRO’s
LNB
RKE
AMR
GPS
ZigBee
LTE, cellular, UMTS
FM radio
Mobile TV
Bluetooth
BFU630F
NPN wideband silicon RF transistor
Rev. 1 — 15 December 2010 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
BFU630F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 December 2010 2 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
1.4 Quick reference data
[1] T
sp
is the temperature at the solder point of the emitter lead.
[2] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning information
3. Ordering information
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CBO
collector-base voltage open emitter - - 16 V
V
CEO
collector-emitter voltage open base - - 5.5 V
V
EBO
emitter-base voltage open collector - - 2.5 V
I
C
collector current - 3 30 mA
P
tot
total power dissipation T
sp
90 C
[1]
- - 200 mW
h
FE
DC current gain I
C
=5mA; V
CE
=2V;
T
j
=25C
90 135 180
C
CBS
collector-base
capacitance
V
CB
=2V; f=1MHz - 47 - fF
f
T
transition frequency I
C
=10mA; V
CE
=2V;
f=2GHz; T
amb
=25C
-21- GHz
G
p(max)
maximum power gain I
C
=15mA; V
CE
=2V;
f=2.4GHz; T
amb
=25C
[2]
- 24.5 - dB
NF noise figure I
C
=3mA; V
CE
=2V;
f=2.4GHz;
S
=
opt
-0.85- dB
P
L(1dB)
output power at 1 dB
gain compression
I
C
=30mA; V
CE
=2.5V;
Z
S
=Z
L
=50;
f=2.4GHz; T
amb
=25C
-11.5- dBm
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3emitter
4 collector
12
34
mbb159
4
1, 3
2
Table 3. Ordering information
Type number Package
Name Description Version
BFU630F - plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
BFU630F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 December 2010 3 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
4. Marking
5. Limiting values
[1] T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 4. Marking
Type number Marking Description
BFU630F D2* * = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 16 V
V
CEO
collector-emitter voltage open base - 5.5 V
V
EBO
emitter-base voltage open collector - 2.5 V
I
C
collector current - 30 mA
P
tot
total power dissipation T
sp
90 C
[1]
- 200 mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 300 K/W
Fig 1. Power derating curve
T
sp
(°C)
0 16012040 80
001aam812
150
50
200
100
250
300
P
tot
(mW)
0
P1-P3P4-P6P7-P9P10-P12

BFU630F,115

Mfr. #:
Buy BFU630F,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 21GHz
Lifecycle:
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