BFU630F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 December 2010 4 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
7. Characteristics
Table 7. Characteristics
T
j
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base breakdown voltage I
C
=2.5A; I
E
=0mA 16 - - V
V
(BR)CEO
collector-emitter breakdown voltage I
C
=1mA; I
B
=0mA 5.5 - - V
I
C
collector current - 3 30 mA
I
CBO
collector-base cut-off current I
E
=0mA; V
CB
=8V - - 100 nA
h
FE
DC current gain I
C
=5mA; V
CE
= 2 V 90 135 180
C
CES
collector-emitter capacitance V
CB
= 2 V; f = 1 MHz - 264 - fF
C
EBS
emitter-base capacitance V
EB
= 0.5 V; f = 1 MHz - 332 - fF
C
CBS
collector-base capacitance V
CB
= 2 V; f = 1 MHz - 47 - fF
f
T
transition frequency I
C
=10mA; V
CE
=2V; f=2GHz;
T
amb
=25C
-21- GHz
G
p(max)
maximum power gain I
C
=15mA; V
CE
=2V; T
amb
=25C
[1]
f=1.5GHz - 27 - dB
f=1.8GHz - 26 - dB
f = 2.4 GHz - 24.5 - dB
f=5.8GHz - 16 - dB
s
21
2
insertion power gain I
C
=15mA; V
CE
=2V; T
amb
=25C
f = 1.5 GHz - 22.5 - dB
f=1.8GHz - 21 - dB
f=2.4GHz - 19 - dB
f=5.8GHz - 12 - dB
NF noise figure I
C
=3mA; V
CE
=2V;
S
=
opt
;
T
amb
=25C
f=1.5GHz - 0.75 - dB
f=1.8GHz - 0.80 - dB
f=2.4GHz - 0.85 - dB
f=5.8GHz - 1.30 - dB
G
ass
associated gain I
C
=3mA; V
CE
=2V;
S
=
opt
;
T
amb
=25C
f = 1.5 GHz - 22.5 - dB
f=1.8GHz - 21 - dB
f=2.4GHz - 19 - dB
f=5.8GHz - 13 - dB
P
L(1dB)
output power at 1 dB gain compression I
C
=30mA; V
CE
=2.5V;
Z
S
=Z
L
=50; T
amb
=25C
f = 1.5 GHz - 12.5 - dBm
f = 1.8 GHz - 12.5 - dBm
f = 2.4 GHz - 11.5 - dBm
f = 5.8 GHz - 12.5 - dBm
