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BFU630F,115

P1-P3P4-P6P7-P9P10-P12
BFU630F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 December 2010 7 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
V
CE
=2V; I
C
=5mA; T
amb
=25C. V
CE
=2V; I
C
=15mA; T
amb
=25C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
V
CE
=2V; T
amb
=25C.
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(4) f = 1.5 GHz
V
CE
=2V; I
C
= 3 mA; T
amb
=25C.
Fig 9. Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
f (GHz)
0252010 155
001aam818
20
30
10
40
50
G
(dB)
0
MSG
MSG
|S21|
2
G
p(max)
f (GHz)
0252010 155
001aam819
20
30
10
40
50
G
(dB)
0
MSG
MSG
|S21|
2
G
p(max)
I
C
(mA)
0108462
001aam820
0.8
1.6
0.4
1.2
2.0
NF
min
(dB)
0
(1)
(2)
(3)
(4)
001aam821
f (GHz)
08624
1.0
0.5
1.5
2.0
NF
min
(dB)
0
BFU630F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 December 2010 8 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
8. Package outline
Fig 11. Package outline SOT343F
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT343F
SOT343F
05-07-12
06-03-16
UNIT
A
max
mm
0.4
0.3
0.75
0.65
0.7
0.5
2.2
1.8
0.25
0.10
1.35
1.15
0.48
0.38
2.2
2.0
b
p
DIMENSIONS (mm are the original dimensions)
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
b
1
c D E e e
1
H
E
1.151.3
L
p
w y
0.10.2
0 1 2 mm
scale
detail X
L
p
c
A
E
X
H
E
D
A
y
b
p
b
1
e
1
e
wA
M
wA
M
12
34
BFU630F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 15 December 2010 9 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
9. Abbreviations
10. Revision history
Table 8. Abbreviations
Acronym Description
AMR Automatic Meter Reading
CDMA Code Division Multiple Access
DC Direct Current
DRO Dielectric Resonator Oscillator
FM Frequency Modulation
GPS Global Positioning System
LNA Low Noise Amplifier
LNB Low Noise Block
LTE Long Term Evolution
NPN Negative-Positive-Negative
RF Radio Frequency
RKE Remote Keyless Entry
UMTS Universal Mobile Telecommunications System
WLAN Wireless Local Area Network
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU630F v.1 20101215 Product data sheet - -
P1-P3P4-P6P7-P9P10-P12

BFU630F,115

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Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 21GHz
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