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LT1160CS#PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
1
LT1160/LT1162
11602fb
APPLICATIO S
U
FEATURES
DESCRIPTIO
U
TYPICAL APPLICATIO
U
Half-/Full-Bridge
N-Channel
Power MOSFET Drivers
■
Floating Top Driver Switches Up to 60V
■
Drives Gate of Top N-Channel MOSFET
above Load HV Supply
■
180ns Transition Times Driving 10,000pF
■
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
■
Top Drive Protection at High Duty Cycles
■
TTL/CMOS Input Levels
■
Undervoltage Lockout with Hysteresis
■
Operates at Supply Voltages from 10V to 15V
■
Separate Top and Bottom Drive Pins
The LT
®
1160/LT1162 are cost effective half-/full-bridge
N-channel power MOSFET drivers. The floating driver can
drive the topside N-channel power MOSFETs operating off
a high voltage (HV) rail of up to 60V.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
The LT1162 is a dual version of the LT1160 and is available
in a 24-pin PDIP or in a 24-pin SO Wide package.
■
PWM of High Current Inductive Loads
■
Half-Bridge and Full-Bridge Motor Control
■
Synchronous Step-Down Switching Regulators
■
3-Phase Brushless Motor Drive
■
High Current Transducer Drivers
■
Class D Power Amplifiers
SV
+
PV
+
UV OUT
IN TOP
IN BOTTOM
14
13
12
11
9
8
1
10
4
2
3
BOOST
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
LT1160
1N4148
HV = 60V MAX
C
BOOST
1µF
10µF
25V
12V
PWM
0Hz TO 100kHz
1160 TA01
IRFZ44
IRFZ44
56
1000µF
100V
SGND PGND
IN TOP IN BOTTOM T GATE DR B GATE DR
LL L L
LH L H
HL H L
HH L L
+
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
2
LT1160/LT1162
11602fb
ABSOLUTE MAXIMUM RATINGS
W
WW
U
Supply Voltage (Note 2) ......................................... 20V
Boost Voltage ......................................................... 75V
Peak Output Currents (< 10µs) .............................. 1.5A
Input Pin Voltages .......................... – 0.3V to V
+
+ 0.3V
Top Source Voltage ..................................... –5V to 60V
Boost to Source Voltage ........................... –0.3V to 20V
Operating Temperature Range
Commercial .......................................... 0°C to 70°C
Industrial ......................................... – 40°C to 85°C
Junction Temperature (Note 3)............................ 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
PACKAGE/ORDER INFORMATION
W
U
U
ORDER PART
NUMBER
LT1162CSW
LT1162ISW
ORDER PART
NUMBER
LT1160CN
LT1160CS
LT1160IN
LT1160IS
T
JMAX
= 125°C, θ
JA
= 58°C/ W (N)
T
JMAX
= 125°C, θ
JA
= 80°C/ W (SW)
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. Test Circuit, T
A
= 25°C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
=
3000pF. Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
S
DC Supply Current (Note 4) V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 2V 7 11 15 mA
V
+
= 15V, V
INTOP
= 2V, V
INBOTTOM
= 0.8V 7 10 15 mA
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 0.8V 7 11 15 mA
I
BOOST
Boost Current (Note 4) V
+
= 15V, V
TSOURCE
= 60V, V
BOOST
= 75V, 3 4.5 6 mA
V
INTOP
= V
INBOTTOM
= 0.8V
V
IL
Input Logic Low ● 1.4 0.8 V
V
IH
Input Logic High ● 2 1.7 V
I
IN
Input Current V
INTOP
= V
INBOTTOM
= 4V ● 725 µA
V
+
UVH
V
+
Undervoltage Start-Up Threshold 8.4 8.9 9.7 V
V
+
UVL
V
+
Undervoltage Shutdown Threshold 7.8 8.3 8.8 V
V
BUVH
V
BOOST
Undervoltage Start-Up Threshold V
TSOURCE
= 60V (V
BOOST
– V
TSOURCE
) 8.8 9.3 9.8 V
V
BUVL
V
BOOST
Undervoltage Shutdown Threshold V
TSOURCE
= 60V (V
BOOST
– V
TSOURCE
) 8.2 8.7 9.2 V
ELECTRICAL CHARACTERISTICS
T
JMAX
= 125°C, θ
JA
= 70°C/ W (N)
T
JMAX
= 125°C, θ
JA
= 110°C/ W (S)
1
2
3
4
5
6
7
TOP VIEW
N PACKAGE
14-LEAD PDIP
S PACKAGE
14-LEAD PLASTIC SO
14
13
12
11
10
9
8
SV
+
IN TOP
IN BOTTOM
UV OUT
SGND
PGND
NC
BOOST
T GATE DR
T GATE FB
T SOURCE
PV
+
B GATE DR
B GATE
FB
1
2
3
4
5
6
7
8
9
10
11
12
TOP VIEW
N PACKAGE
24-LEAD PDIP
24
23
22
21
20
19
18
17
16
15
14
13
SW PACKAGE
24-LEAD PLASTIC SO WIDE
SV
+
A
IN TOP
A
IN BOTTOM
A
UV
OUT
A
GND A
B GATE FB A
SV
+
B
IN TOP B
IN BOTTOM B
UV
OUT
B
GND B
B GATE FB B
BOOST A
T GATE DR A
T GATE FB A
T SOURCE A
PV
+
A
B GATE DR A
BOOST B
T GATE DR B
T GATE FB B
T SOURCE B
PV
+
B
B GATE DR B
(Note 1)
OBSOLETE
PART NUMBERS
LT1162CN
LT1162IN
3
LT1160/LT1162
11602fb
I
UVOUT
Undervoltage Output Leakage V
+
= 15V ● 0.1 5 µA
V
UVOUT
Undervoltage Output Saturation V
+
= 7.5V, I
UVOUT
= 2.5mA ● 0.2 0.4 V
V
OH
Top Gate ON Voltage V
INTOP
= 2V, V
INBOTTOM
= 0.8V ● 11 11.3 12 V
Bottom Gate ON Voltage V
INTOP
= 0.8V, V
INBOTTOM
= 2V ● 11 11.3 12 V
V
OL
Top Gate OFF Voltage V
INTOP
= 0.8V, V
INBOTTOM
= 2V ● 0.4 0.7 V
Bottom Gate OFF Voltage V
INTOP
= 2V, V
INBOTTOM
= 0.8V ● 0.4 0.7 V
t
r
Top Gate Rise Time V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V, ● 130 200 ns
Measured at V
TGATE DR
(Note 5)
Bottom Gate Rise Time V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V, ● 90 200 ns
Measured at V
BGATE DR
(Note 5)
t
f
Top Gate Fall Time V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V, ● 60 140 ns
Measured at V
TGATE DR
(Note 5)
Bottom Gate Fall Time V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V, ● 60 140 ns
Measured at V
BGATE DR
(Note 5)
t
D1
Top Gate Turn-On Delay V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V, ● 250 500 ns
Measured at V
TGATE DR
(Note 5)
Bottom Gate Turn-On Delay V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V, ● 200 400 ns
Measured at V
BGATE DR
(Note 5)
t
D2
Top Gate Turn-Off Delay V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V, ● 300 600 ns
Measured at V
TGATE DR
(Note 5)
Bottom Gate Turn-Off Delay V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V, ● 200 400 ns
Measured at V
BGATE DR
(Note 5)
t
D3
Top Gate Lockout Delay V
INBOTTOM
(+) Transition, V
INTOP
= 2V, ● 300 600 ns
Measured at V
TGATE DR
(Note 5)
Bottom Gate Lockout Delay V
INTOP
(+) Transition, V
INBOTTOM
= 2V, ● 250 500 ns
Measured at V
BGATE DR
(Note 5)
t
D4
Top Gate Release Delay V
INBOTTOM
(–) Transition, V
INTOP
= 2V, ● 250 500 ns
Measured at V
TGATE DR
(Note 5)
Bottom Gate Release Delay V
INTOP
(–) Transition, V
INBOTTOM
= 2V, ● 200 400 ns
Measured at V
BGATE DR
(Note 5)
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C.Test Circuit, T
A
= 25°C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
=
3000pF. Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: For the LT1160, Pins 1, 10 should be connected together. For the
LT1162, Pins 1, 7, 14, 20 should be connected together.
Note 3: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1160CN/LT1160IN: T
J
= T
A
+ (P
D
)(70°C/W)
LT1160CS/LT1160IS: T
J
= T
A
+ (P
D
)(110°C/W)
LT1162CN/LT1162IN: T
J
= T
A
+ (P
D
)(58°C/W)
LT1162CS/LT1162IS: T
J
= T
A
+ (P
D
)(80°C/W)
Note 4: I
S
is the sum of currents through SV
+
, PV
+
and Boost pins.
I
BOOST
is the current through the Boost pin. Dynamic supply current is
higher due to the gate charge being delivered at the switching frequency.
See Typical Performance Characteristics and Applications Information
sections. The LT1160 = 1/2 LT1162.
Note 5: See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
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LT1160CS#PBF

Mfr. #:
Buy LT1160CS#PBF
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Half-/Full-Bridge N-Ch Pwr MOSFET Drvrs
Lifecycle:
New from this manufacturer.
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