4
LT1160/LT1162
11602fb
TYPICAL PERFORMANCE CHARACTERISTICS
U
W
INPUT FREQUENCY (kHz)
1
SUPPLY CURRENT (mA)
60
50
40
30
20
10
0
10 100 1000
1160/62 G04
C
GATE
= 10000pF
C
GATE
= 1000pF
50% DUTY CYCLE
V
+
= 12V
C
GATE
= 3000pF
TEMPERATURE (°C)
–50
V
BOOST
– V
TSOURCE
VOLTAGE (V)
100
13
12
11
10
9
8
7
6
5
4
1160/62 G06
025 25 50 75 125
SHUTDOWN THRESHOLD
START-UP THRESHOLD
V
TSOURCE
= 60V
TEMPERATURE (°C)
–50
INPUT CURRENT (µA)
14
13
12
11
10
9
8
7
6
5
4
0
50
75
1160/62 G08
–25
25
100
125
V
+
= 12V
V
IN
= 4V
DC Supply Current
vs Temperature
TEMPERATURE (°C)
–50
SUPPLY CURRENT (mA)
100
14
13
12
11
10
9
8
7
6
5
1160/62 G02
025 25 50 75 125
BOTH INPUTS
HIGH OR LOW
V
INTOP
= HIGH
V
INBOTTOM
= LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
V
+
= 12V
INPUT FREQUENCY (kHz)
1
SUPPLY CURRENT (mA)
60
50
40
30
20
10
0
10 100 1000
1160/62 G03
V
+
= 20V
50% DUTY CYCLE
C
GATE
= 3000pF
V
+
= 15V
V
+
= 10V
DC + Dynamic Supply Current
vs Input Frequency
DC Supply Current
vs Supply Voltage
DC + Dynamic Supply Current
vs Input Frequency
TEMPERATURE (°C)
–50
SUPPLY VOLTAGE (V)
100
13
12
11
10
9
8
7
6
5
4
1160/62 G05
025 25 50 75 125
SHUTDOWN THRESHOLD
START-UP THRESHOLD
Undervoltage Lockout (V
+
)
Undervoltage Lockout (V
BOOST
)
Input Threshold Voltage
vs Temperature
TEMPERATURE (°C)
–50
INPUT THRESHOLD VOLTAGE (V)
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1160/62 G07
025 25 50 75 125
V
LOW
V
HIGH
V
+
= 12V
INPUT VOLTAGE (V)
4
INPUT CURRENT (mA)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
8
9
1160/62 G09
567
10
11
12
V
+
= 12V
Top or Bottom Input Pin Current
vs Input Voltage
(LT1160 or 1/2 LT1162)
SUPPLY VOLTAGE (V)
8
SUPPLY CURRENT (mA)
20
14
13
12
11
10
9
8
7
6
5
1160/62 G01
1210 14 16 18 22
BOTH INPUTS
HIGH OR LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
V
INTOP
= HIGH
V
INBOTTOM
= LOW
Top or Bottom Input Pin Current
vs Temperature
5
LT1160/LT1162
11602fb
TYPICAL PERFORMANCE CHARACTERISTICS
U
W
TEMPERATURE (°C)
–50
BOTTOM GATE RISE TIME (ns)
100
230
210
190
170
150
130
110
90
70
50
1160/62 G10
025 25 50 75 125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
C
LOAD
= 1000pF
V
+
= 12V
Bottom Gate Rise Time
vs Temperature
TEMPERATURE (°C)
–50
BOTTOM GATE FALL TIME (ns)
100
210
190
170
150
130
110
90
70
50
30
1160/62 G11
025 25 50 75 125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
Bottom Gate Fall Time
vs Temperature
TEMPERATURE (°C)
–50
TOP GATE RISE TIME (ns)
100
300
280
260
240
220
200
180
160
140
120
100
80
1160/62 G12
025 25 50 75 125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
Top Gate Rise Time
vs Temperature
TEMPERATURE (°C)
–50
TOP GATE FALL TIME (ns)
100
11160/62 G13
050
180
160
140
120
100
80
60
40
20
25 25 75 125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
TEMPERATURE (°C)
–50
TURN OFF DELAY TIME (ns)
100
400
350
300
250
200
150
100
1160/62 G15
025 25 50 75 125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Turn-On Delay Time
vs Temperature
TEMPERATURE (°C)
–50
TURN ON DELAY TIME (ns)
100
400
350
300
250
200
150
100
1160/62 G14
025 25 50 75 125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Turn-Off Delay Time
vs Temperature
TEMPERATURE (°C)
–50
LOCKOUT DELAY TIME (ns)
100
400
350
300
250
200
150
100
1160/62 G16
025 25 50 75 125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Lockout Delay Time
vs Temperature
TEMPERATURE (°C)
–50
RELEASE DELAY TIME (ns)
100
400
350
300
250
200
150
100
1160/62 G17
025 25 50 75 125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Release Delay Time
vs Temperature
(LT1160 or 1/2 LT1162)
Top Gate Fall Time
vs Temperature
6
LT1160/LT1162
11602fb
PIN FUNCTIONS
UUU
LT1162
SV
+
(Pins 1, 7): Main Signal Supply. Must be closely
decoupled to ground Pins 5 and 11.
IN TOP (Pins 2, 8): Top Driver Input. The Input Top is
disabled when the Input Bottom is high. A 3k input resistor
followed by a 5V internal clamp prevents saturation of the
input transistors.
IN BOTTOM (Pins 3, 9): Bottom Driver Input. The Input
Bottom is disabled when the Input Top is high. A 3k input
resistor followed by a 5V internal clamp prevents satura-
tion of the input transistors.
UV OUT (Pins 4, 10): Undervoltage Output. Open collector
NPN output which turns on when V
+
drops below the
undervoltage threshold.
GND (Pins 5, 11): Ground Connection.
B GATE FB (Pins 6, 12): Bottom Gate Feedback. Must
connect directly to the bottom power MOSFET gate. The
top MOSFET turn-on is inhibited until Bottom Gate Feed-
back pins have discharged to below 2.5V.
B GATE DR (Pins 13, 19): Bottom Gate Drive. The high
current drive point for the bottom MOSFET. When a gate
resistor is used it is inserted between the Bottom Gate
Drive pin and the gate of the MOSFET.
PV
+
(Pins 14, 20): Bottom Driver Supply. Must be con-
nected to the same supply as Pins 1 and 7.
T SOURCE (Pins 15, 21): Top Driver Return. Connects to
the top MOSFET source and the low side of the bootstrap
capacitor.
T GATE FB (Pins 16, 22): Top Gate Feedback. Must
connect directly to the top power MOSFET gate. The
bottom MOSFET turn-on is inhibited until V
TGF
– V
TSOURCE
has discharged to below 2.9V.
T GATE DR (Pins 17, 23): Top Gate Drive. The high current
drive point for the top MOSFET. When a gate resistor is
used it is inserted between the Top Gate Drive pin and the
gate of the MOSFET.
BOOST (Pins 18, 24): Top Driver Supply. Connects to the
high side of the bootstrap capacitor.
LT1160
SV
+
(Pin 1): Main Signal Supply. Must be closely decoupled
to the signal ground Pin 5.
IN TOP (Pin 2): Top Driver Input. Pin 2 is disabled when Pin
3 is high. A 3k input resistor followed by a 5V internal
clamp prevents saturation of the input transistors.
IN BOTTOM (Pin 3): Bottom Driver Input. Pin 3 is disabled
when Pin 2 is high. A 3k input resistor followed by a 5V
internal clamp prevents saturation of the input transistors.
UV OUT (Pin 4): Undervoltage Output. Open collector NPN
output which turns on when V
+
drops below the
undervoltage threshold.
SGND (Pin 5): Small Signal Ground. Must be routed
separately from other grounds to the system ground.
PGND (Pin 6): Bottom Driver Power Ground. Connects to
source of bottom N-channel MOSFET.
B GATE FB (Pin 8): Bottom Gate Feedback. Must connect
directly to the bottom power MOSFET gate. The top
MOSFET turn-on is inhibited until Pin 8 has discharged to
below 2.5V.
B GATE DR (Pin 9): Bottom Gate Drive. The high current
drive point for the bottom MOSFET. When a gate resistor
is used it is inserted between Pin 9 and the gate of the
MOSFET.
PV
+
(Pin 10): Bottom Driver Supply. Must be connected to
the same supply as Pin 1.
T SOURCE (Pin 11): Top Driver Return. Connects to the
top MOSFET source and the low side of the bootstrap
capacitor.
T GATE FB (Pin 12): Top Gate Feedback. Must connect
directly to the top power MOSFET gate. The bottom
MOSFET turn-on is inhibited until V
12
– V
11
has discharged
to below 2.9V.
T GATE DR (Pin 13): Top Gate Drive. The high current drive
point for the top MOSFET. When a gate resistor is used it
is inserted between Pin 13 and the gate of the MOSFET.
BOOST (Pin 14): Top Driver Supply. Connects to the high
side of the bootstrap capacitor.

LT1160CS#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Half-/Full-Bridge N-Ch Pwr MOSFET Drvrs
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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