Vishay Siliconix
SiZ702DT
New Product
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFETs
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Low Current DC/DC
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and for channel-2.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(Typ.)
Channel-1
and
Channel-2
30
0.0120 at V
GS
= 10 V
16
a
6.8 nC
0.0145 at V
GS
= 4.5 V
16
a
Ordering Information:
SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
1
G
2
S
2
S
2
D
1
D
1
1
6
5
4
2
3
3.73 mm
6 mm
PowerPAIR
®
6 x 3.7
D
1
S
1
/D
2
Pin 1
(Pin 7)
D
1
S
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
G
1
S
1
/D
2
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Channel-1 Channel-2 Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
16
a
A
T
C
= 70 °C
16
a
T
A
= 25 °C
13.8
b, c
14
b, c
T
A
= 70 °C
11
b, c
11.2
b, c
Pulsed Drain Current
I
DM
50
Source Drain Current Diode Current
T
C
= 25 °C
I
S
16
a
16
a
T
A
= 25 °C
3.2
b, c
3.7
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
18
Single Pulse Avalanche Energy
E
AS
16 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
27 30
W
T
C
= 70 °C
17.4 19
T
A
= 25 °C
3.9
b, c
4.5
b, c
T
A
= 70 °C
2.5
b, c
2.9
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol
Channel-1 Channel-2
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
b, f
t 10 s R
thJA
24 32 21 28
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
3.5 4.6 3.2 4.2
