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Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ702DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=10V thru 4 V
V
GS
=3V
V
GS
=2V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.006
0.008
0.010
0.012
0.014
0 102030405060
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
=24V
V
DS
=15V
I
D
= 13.8 A
V
DS
=7.5V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
- 50 -- 25 0 25 50 75 100 125 150
I
D
= 13.8 A
V
GS
=10V;4.5V
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)