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SIZ702DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
www.vishay.com
4
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ702DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=10V thru 4 V
V
GS
=3V
V
GS
=2V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.006
0.008
0.010
0.012
0.014
0 102030405060
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 3 6 9 12 15
V
DS
=24V
V
DS
=15V
I
D
= 13.8 A
V
DS
=7.5V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
- 50 -- 25 0 25 50 75 100 125 150
I
D
= 13.8 A
V
GS
=10V;4.5V
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
5
Vishay Siliconix
SiZ702DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)
I
S
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.005
0.010
0.015
0.020
0.025
0.030
02468 10
I
D
=13.8 A
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
10
20
30
40
50
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
100 ms
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
1s,10s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
www.vishay.com
6
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ702DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
10
20
30
40
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Case
0
5
10
15
20
25
30
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ702DT-T1-GE3

Mfr. #:
Buy SIZ702DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SIZ340DT-T1-GE3
Lifecycle:
New from this manufacturer.
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