Si4410DYPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Diode Conduction) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– 0.7 1.1 V T
J
= 25°C, I
S
= 2.3A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 50 80 ns T
J
= 25°C, I
F
= 2.3A
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
50
2.3
A
When mounted on FR4 Board, t ≤10 sec
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.0100.0135 V
GS
= 10V, I
D
= 10A
––– 0.015 0.020 V
GS
= 4.5V, I
D
= 5.0A
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance ––– 35 ––– S V
DS
= 15V, I
D
= 10A
––– ––– 1.0 V
DS
= 30V, V
GS
= 0V
––– ––– 25 V
DS
= 30V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 30 45 I
D
= 10A
Q
gs
Gate-to-Source Charge ––– 5.4 ––– nC V
DS
= 15V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 6.5 ––– V
GS
= 10V, See Fig. 10
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= 25V
t
r
Rise Time ––– 7.7 ––– I
D
= 1.0A
t
d(off)
Turn-Off Delay Time ––– 38 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 44 ––– R
D
= 25Ω,
C
iss
Input Capacitance ––– 1585 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 739 ––– pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 106 ––– ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Starting T
J
= 25°C, L = 8.0mH
R
G
= 25Ω, I
AS
= 10A. (See Figure 15)
I
SD
≤2.3A, di/dt ≤ 130A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
