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SI4410DYTRPBF

P1-P3P4-P6P7-P8
Si4410DYPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4 0.5 0.6 0.7 0.8 0.9 1.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
0.1 1 10 100 100
0
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0 10 20 30 40 50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
10A
V = 15V
DS
V = 24V
DS
1 10 100
0
400
800
1200
1600
2000
2400
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
Si4410DYPbF
www.irf.com 5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10. Typical Power Vs. Time
0
20
40
60
80
0.01 0.1 1 10 100
Power ( W)
Time (sec)
Si4410DYPbF
6 www.irf.com
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 13. Typical On-Resistance Vs. Gate
Voltage
0.00
0.04
0.08
0.12
0.16
0.20
01020304050
A
I , Drain Current (A)
D
R , Drain-to-Source On Resistance
DS(on)
(Ω)
V = 10V
GS
V = 4.5V
GS
0.00
0.01
0.02
0.03
345678910
A
R , Drain-to-Source On Resistance
DS(on)
(Ω)
GS
V , Gate-to-Source Voltage (V)
I = 10A
D
Fig 14. Typical Threshold Voltage Vs.Temperature
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
A
GS(th)
V , Variance ( V)
I =250µA
D
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
200
400
600
800
1000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
4.5A
8.0A
10A
P1-P3P4-P6P7-P8

SI4410DYTRPBF

Mfr. #:
Buy SI4410DYTRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC
Lifecycle:
New from this manufacturer.
Delivery:
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