OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MRF8S18120HSR3

P1-P3P4-P6P7-P9P10-P12P13-P14
MRF8S18120HR3 MRF8S18120HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM ED GE bas e s tation applications with frequen-
cies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
! Typical GSM Performance: V
DD
=28Volts,I
DQ
= 800 mA, P
out
=
72 Watts CW
Frequency
G
ps
(dB)
"
D
(%)
1805 MHz 18.2 49.8
1840 MHz 18.6 51.4
1880 MHz 18.7 53.9
! Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
! Typical P
out
@ 1 dB Compression Point ≃ 120 Watts CW
! Typical GSM EDGE Performance: V
DD
=28Volts,I
DQ
= 800 mA, P
out
=
46 Watts Avg.
Frequency
G
ps
(dB)
"
D
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz 17.9 41.0 -- 6 4 -- 7 6 1.6
1840 MHz 18.2 41.9 -- 6 3 -- 7 6 1.7
1880 MHz 18.3 43.2 -- 6 1 -- 7 6 2.0
Features
! Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
! Internally Matched for Ease of Use
! Integrated ESD Protection
! Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
! Optimized for Doherty Applications
! RoHS Compliant
! In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +65 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 #C
Case Operating Temperature T
C
150 #C
Operating Junction Temperature
(1,2)
T
J
225 #C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8S18120H
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
1805--1880 MHz, 72 W CW, 28 V
GSM, GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S18120HR3
MRF8S18120HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S18120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S18120HSR3
$ Freescale Semiconductor, Inc., 2009--2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79#C, 72 W CW, 28 Vdc, I
DQ
= 800 mA
Case Temperature 79#C, 120 W CW, 28 Vdc, I
DQ
= 800 mA
R
%
JC
0.47
0.46
#C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (T
A
=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Vo ltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 &Adc
Zero Gate Vo ltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
— — 1 &Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 &Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 260 &Adc)
V
GS(th)
1.2 1.8 2.7 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 800 mAdc, Measured in Functional Test)
V
GS(Q)
1.8 2.6 3.3 Vdc
Drain--Source On-- Voltage
(V
GS
=10Vdc,I
D
=2.3Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 800 mA, P
out
= 72 W CW, f = 1805 MHz
Power Gain
G
ps
17 18.2 20 dB
Drain Efficiency "
D
48 49.8 — %
Input Return Loss IRL — -- 1 1 -- 8 dB
P
out
@ 1 dB Compression Point, CW P1dB 112 — — W
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 800 mA, P
out
=72WCW
Frequency
G
ps
(dB)
"
D
(%)
IRL
(dB)
1805 MHz 18.2 49.8 -- 1 1
1840 MHz 18.6 51.4 -- 1 5
1880 MHz 18.7 53.9 -- 1 2
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power A mplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
MRF8S18120HR3 MRF8S18120HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 800 mA, 1805-- 1880 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 120 — W
IMD Symmetry @ 94 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMD
sym
— 10 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 35 — MHz
Gain Flatness in 75 MHz Bandwidth @ P
out
=72WCW G
F
— 0.5 — dB
Gain Variation over Temperature
(--30#Cto+85#C)
'G — 0.01 — dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C)
'P1dB — 0.004 — dB/#C
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 800 mA, P
out
=46WAvg.,
1805--1880 MHz EDGE Modulation
Frequency
G
ps
(dB)
"
D
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz 17.9 41.0 -- 6 4 -- 7 6 1.6
1840 MHz 18.2 41.9 -- 6 3 -- 7 6 1.7
1880 MHz 18.3 43.2 -- 6 1 -- 7 6 2.0
P1-P3P4-P6P7-P9P10-P12P13-P14

MRF8S18120HSR3

Mfr. #:
Buy MRF8S18120HSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet