MRF8S18120HR3 MRF8S18120HSR3
7
RF Device Data
Freescale Semiconductor
GSM TEST SIGNAL
Figure 11. EDGE Spectrum
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 9 0
--100
200 kHz Span 2 MHzCenter 1.96 GHz
-- 1 1 0
400 kHz
600 kHz
400 kHz
600 kHz
(dB)
Reference Power
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
V
DD
=28Vdc,I
DQ
= 800 mA, P
out
=72WCW
f
MHz
Z
source
(
Z
load
(
1760 1.53 -- j1.94 2.32 -- j0.41
1780 1.53 -- j1.82 2.31 -- j0.51
1800 1.56 -- j1.90 2.31 -- j0.49
1820 1.56 -- j1.86 2.32 -- j0.40
1840 1.57 -- j1.75 2.33 -- j0.26
1860 1.51 -- j1.64 2.29 -- j0.12
1880 1.49 -- j1.58 2.29 -- j0.01
1900 1.49 -- j1.55 2.29 + j0.05
1920 1.48 -- j1.53 2.31 + j0.06
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured from
drain to ground.
Figure 12. Series Equivalent Source and Load Impedance
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
