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MRF8S18120HSR3

P1-P3P4-P6P7-P9P10-P12P13-P14
4
RF Device Data
Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3
Figure 1. MRF8S18120HR3(HSR3) Test Circuit Component Layout
MRF8S18120
CUT OUT AREA
Rev. 2
R2
C3
C7
C6 C5
C1
C8
C9
C10
C13
C11 C12
C2
R1
C4
Table 5. MRF8S18120HR3(HSR3) Test Circuit Component Designations and V alue s
Part Description Part Number Manufacturer
C1, C2 12 pF Chip Capacitors ATC100B120JT500XT ATC
C3, C8 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C4 10 nF Chip Capacitor C1825C103K1GAC--TU Kemet
C5 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC
C6, C9 2.2 &F, 100 V Chip Capacitors C3225X7R2A225KT TDK
C7 47 &F, 16 V Tantalum Capacitor T491D476K016AT Kemet
C10, C11, C12 10 &F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C13 330 &F, 63 V Electrolytic Capacitor MCRH63V337M13X21--RH Multicomp
R1 10 (, 1/4 W Chip Resistor CRCW120610R0JNEA Vishay
R2 4.75 (, 1/4 W Chip Resistor CRCW12064R75FNEA Vishay
PCB 0.030), *
r
=2.55 250GX--0300--55--22 Arlon
MRF8S18120HR3 MRF8S18120HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1780 1800 1820 1840 1860 1880 19201760 1900
"
D,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
15 30
G
ps
21 60
20
55
19
50
45
35
IRL
Figure 2. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 72 Watts CW
-- 5
-- 2 0
17
40
-- 1 0
-- 1 5
"
D
V
DD
=28Vdc,P
out
=72WCW,I
DQ
= 800 mA
18
16
1780 1800 1820 1840 1860 1880 19201760 1900
"
D,
DRAIN
EFFICIENCY (%)
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ P
out
= 46 Watts Avg.
21
1
50
IRL
20
45
40
18
35
3
16
2
G
ps
, POWER GAIN (dB)
EVM, ERROR VECTOR
MAGNITUDE (% rms)
V
DD
=28Vdc,P
out
=46WAvg.
I
DQ
= 800 mA, EDGE Modulation
19
17
15
"
D
IRL, INPUT RETURN LOSS (dB)
-- 5
-- 2 0
-- 1 0
-- 1 5
EVM
100
-- 6 0
110
-- 2 0
-- 3 0
-- 4 0
-- 5 0
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation D istortion Products
versus Two--Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
IM7--U
IM5--U
IM5--L
IM3--L
IM7--L
IM3--U
V
DD
=28Vdc,P
out
= 94 W (PEP)
I
DQ
= 800 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
-- 1 0
P
out
, OUTPUT POWER (WATTS) CW
10
19
f = 1880 MHz
V
DD
=28Vdc
I
DQ
= 800 mA
18
16
15
1 100
Figure 5. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
17
1840 MHz
1805 MHz
1805 MHz
G
ps
"
D
G
ps
1880 MHz
1840 MHz
14
300
"
D,
DRAIN EFFICIENCY (%)
0
75
60
45
30
15
6
RF Device Data
Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3
TYPICAL CHARACTERISTICS
Figure 6. EVM versus Frequency
f, FREQUENCY (MHz)
P
out
=72WAvg.
25 W Avg.
EVM, ERROR VECTOR MAGNITUDE (% rms)
1900
0
6
1800
3
1
18401820
4
2
1860
46 W Avg.
-- 4 0
P
out
, OUTPUT POWER (WATTS)
Figure 7. Spectral Regrowth at 400 kHz
versus Output Power
-- 4 5
-- 5 0
-- 5 5
f = 1880 MHz
SPECTRAL REGROWTH @ 400 kHz (dBc)
-- 6 0
-- 6 5
-- 7 0
0
-- 8 0
-- 5 0
0
P
out
, OUTPUT POWER (WATTS)
-- 6 0
-- 6 5
-- 7 0
10
Figure 8. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
20 100
-- 7 5
30 40 50
-- 5 5
60 70 80 90
5
1880
10 20 30 40 50 60 70 80 90 100
1840 MHz
1805 MHz
f = 1880 MHz
1840 MHz
1805 MHz
P
out
, OUTPUT POWER (WATTS) AVG.
100
4
10
8
6
0
101
2
15
75
45
30
0
Figure 9. EVM and Drain Efficiency versus
Output Power
EVM, ERROR VECTOR MAGNITUDE (% rms)
EVM
60
"
D
"
D,
DRAIN EFFICIENCY (%)
f = 1880 MHz
1840 MHz
1805 MHz
1840 MHz
Figure 10. Broadband Frequency Response
0
20
1440
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQ
= 800 mA
15
10
5
1540
GAIN (dB)
Gain
1640 1740 1840 2040 2140 2240 2340
IRL
-- 2 0
0
-- 5
-- 1 0
-- 1 5
IRL (dB)
1940
V
DD
=28Vdc,I
DQ
= 800 mA
EDGE Modulation
V
DD
=28Vdc,I
DQ
= 800 mA
EDGE Modulation
V
DD
=28Vdc,I
DQ
= 800 mA
EDGE Modulation
V
DD
=28Vdc,I
DQ
= 800 mA
EDGE Modulation
P1-P3P4-P6P7-P9P10-P12P13-P14

MRF8S18120HSR3

Mfr. #:
Buy MRF8S18120HSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 1.8GHZ 120W NI780HS
Lifecycle:
New from this manufacturer.
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