CY7C1347F
Document #: 38-05213 Rev. *C Page 4 of 19
Pin Definitions
Name
(BGA,FBGA)
Name
(100TQFP)
I/O Description
A
0,
A
1,
A A
[16:0]
Input-
Synchronous
Address Inputs used to select one of the 128K address locations. Sampled at
the rising edge of the CLK if ADSP
or ADSC is active LOW, and CE
1
,
CE
2
, and
CE
3
are sampled active. A
[1:0]
feeds the 2-bit counter.
BW
A,
BW
B,
BW
C,
BW
D
BW
[A:D]
Input-
Synchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes
to the SRAM. Sampled on the rising edge of CLK.
GW GW Input-
Synchronous
Global Write Enable Input, active LOW. When asserted LOW on the rising edge
of CLK, a global write is conducted (ALL bytes are written, regardless of the values
on BW
[A:D]
and BWE).
BWE BWE Input-
Synchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This
signal must be asserted LOW to conduct a byte write.
CLK CLK Input-Clock Clock Input. Used to capture all synchronous inputs to the device. Also used to
increment the burst counter when ADV
is asserted LOW, during a burst operation.
CE
1
CE
1
Input-
Synchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE
2
and CE
3
to select/deselect the device. ADSP is ignored if CE
1
is HIGH.
CE
2
CE
2
Input-
Synchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE
1
and CE
3
to select/deselect the device.
CE
3
CE
3
Input-
Synchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE
1
and
CE
2
to select/deselect the device.
OE OE Input-
Asynchronous
Output Enable, asynchronous input, active LOW. Controls the direction of the
I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O
pins are three-stated, and act as input data pins. OE
is masked during the first clock
of a read cycle when emerging from a deselected state.
ADV ADV Input-
Synchronous
Advance Input signal, sampled on the rising edge of CLK. When asserted, it
automatically increments the address in a burst cycle.
ADSP ADSP Input-
Synchronous
Address Strobe from Processor, sampled on the rising edge of CLK. When
asserted LOW, addresses presented to the device are captured in the address
registers. A
[1:0]
are also loaded into the burst counter. When ADSP and ADSC are
both asserted, only ADSP
is recognized. ASDP is ignored when CE
1
is deasserted
HIGH.
ADSC ADSC Input-
Synchronous
Address Strobe from Controller, sampled on the rising edge of CLK. When
asserted LOW, addresses presented to the device are captured in the address
registers. A
[1:0]
are also loaded into the burst counter. When ADSP and ADSC are
both asserted, only ADSP
is recognized.
ZZ ZZ Input-
Asynchronous
ZZ “sleep” Input. This active HIGH input places the device in a non-time-critical
“sleep” condition with data integrity preserved. For normal operation, this pin has
to be LOW or left floating. ZZ pin has an internal pull-down.
DQ
A,
DQ
B
DQ
C,
DQ
D
DQP
A,
DQP
B,
DQP
C,
DQP
D
DQs
DQPs
I/O-
Synchronous
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that
is triggered by the rising edge of CLK. As outputs, they deliver the data contained
in the memory location specified by the addresses presented during the previous
clock rise of the read cycle. The direction of the pins is controlled by OE
. When OE
is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPs are
placed in a three-state condition.
V
DD
V
DD
Power Supply Power supply inputs to the core of the device.
V
SS
V
SS
Ground Ground for the core of the device.
V
DDQ
V
DDQ
I/O Power
Supply
Power supply for the I/O circuitry.
V
SSQ
V
SSQ
I/O Ground Ground for the I/O circuitry.
MODE MODE Input-
Static
Selects Burst Order. When tied to GND selects linear burst sequence. When tied
to V
DDQ
or left floating selects interleaved burst sequence. This is a strap pin and
should remain static during device operation. Mode Pin has an internal pull-up.
NC NC No Connects.
CY7C1347F
Document #: 38-05213 Rev. *C Page 5 of 19
Introduction
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (T
CO
) is 2.6 ns
(250-MHz device).
The CY7C1347F supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
linear burst sequence is suited for processors that utilize a
linear burst sequence. The burst order is user selectable, and
is determined by sampling the MODE input. Accesses can be
initiated with either the Address Strobe from Processor
(ADSP
) or the Address Strobe from Controller (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE
) and Byte Write Select (BW
[A:D]
) inputs. A Global Write
Enable (GW
) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE
) provide for easy bank
selection and output three-state control. ADSP
is ignored if
CE
1
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP
or ADSC is asserted LOW, (2)
CE
1
, CE
2
, CE
3
are all asserted active, and (3) the write signals
(GW
, BWE) are all deasserted HIGH. ADSP is ignored if CE
1
is HIGH. The address presented to the address inputs (A
[16:0]
)
is stored into the address advancement logic and the Address
Register while being presented to the memory core. The corre-
sponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the Output Register and onto
the data bus within 2.6 ns (250-MHz device) if OE
is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always three-stated during the first cycle of the access. After
the first cycle of the access, the outputs are controlled by the
OE
signal. Consecutive single read cycles are supported.
Once the SRAM is deselected at clock rise by the chip select
and either ADSP
or ADSC signals, its output will three-state
immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP
is asserted LOW, and (2)
CE
1
, CE
2
, CE
3
are all asserted active. The address presented
to A
[16:0]
is loaded into the Address Register and the address
advancement logic while being delivered to the RAM core. The
write signals (GW
, BWE, and BW
[A:D]
) and ADV inputs are
ignored during this first cycle.
ADSP
-triggered write accesses require two clock cycles to
complete. If GW
is asserted LOW on the second clock rise, the
data presented to the DQs and DQPs inputs is written into the
corresponding address location in the RAM core. If GW
is
HIGH, then the write operation is controlled by BWE
and
BW
[A:D]
signals. The CY7C1347F provides byte write
capability that is described in the Write Cycle Description table.
Asserting the Byte Write Enable input (BWE) with the selected
Byte Write (BW
[A:D]
) input will selectively write to only the
desired bytes.
Bytes not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
Because the CY7C1347F is a common I/O device, the Output
Enable (OE
) must be deasserted HIGH before presenting data
to the DQs and DQPs inputs. Doing so will three-state the
output drivers. As a safety precaution, DQs and DQPs are
automatically three-stated whenever a write cycle is detected,
regardless of the state of OE
.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC
is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE
1
, CE
2
, CE
3
are all asserted active,
and (4) the appropriate combination of the write inputs (GW
,
BWE
, and BW
[A:D]
) are asserted active to conduct a write to
the desired byte(s). ADSC
-triggered write accesses require a
single clock cycle to complete. The address presented to
A
[16:0]
is loaded into the address register and the address
advancement logic while being delivered to the RAM core. The
ADV
input is ignored during this cycle. If a global write is
conducted, the data presented to the DQs and DQPs is written
into the corresponding address location in the RAM core. If a
byte write is conducted, only the selected bytes are written.
Bytes not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
Because the CY7C1347F is a common I/O device, the Output
Enable (OE
) must be deasserted HIGH before presenting data
to the DQs and DQPs inputs. Doing so will three-state the
output drivers. As a safety precaution, DQs and DQPs are
automatically three-stated whenever a write cycle is detected,
regardless of the state of OE.
Burst Sequences
The CY7C1347F provides a two-bit wraparound counter, fed
by A
[1:0]
, that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed specif-
ically to support Intel Pentium applications. The linear burst
sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user-selectable
through the MODE input.
Asserting ADV
LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE
1
, CE
2
, CE
3
, ADSP, and ADSC must
remain inactive for the duration of t
ZZREC
after the ZZ input
returns LOW.
CY7C1347F
Document #: 38-05213 Rev. *C Page 6 of 19
Interleaved Burst Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
A
[1:0]
A
[1:0]
A
[1:0]
A
[1:0]
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
Linear Burst Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
A
[1:0]
A
[1:0]
A
[1:0]
A
[1:0]
00 01 10 11
01 10 11 00
10 11 00 01
11 00 01 10
ZZ Mode Electrical Characteristics
Parameter Description Test Conditions Min. Max. Unit
I
DDZZ
Snooze mode standby current ZZ > V
DD
0.2V 40 mA
t
ZZS
Device operation to ZZ ZZ > V
DD
0.2V 2t
CYC
ns
t
ZZREC
ZZ recovery time ZZ < 0.2V 2t
CYC
ns
t
ZZI
ZZ Active to snooze current This parameter is sampled 2t
CYC
ns
t
RZZI
ZZ Inactive to exit snooze current This parameter is sampled 0 ns
Truth Table
[2, 3, 4, 5, 6]
Next Cycle
Add.
Used ZZ
CE
3
CE
2
CE
1
ADSP ADSC ADV
WRITE
OE CLK
DQ
Deselect Cycle, Power-down None H X X L X L X X X L-H three-state
Deselect Cycle, Power-down None L L X L L X X X X L-H three-state
Deselect Cycle, Power-down None L X H L L X X X X L-H three-state
Deselect Cycle, Power-down None L L X L H L X X X L-H three-state
Deselect Cycle, Power-down None L X H L H L X X X L-H three-state
Snooze Mode, Power-down None X X X H X X X X X X three-state
READ Cycle, Begin Burst External L H L L L X X X L L-H Q
READ Cycle, Begin Burst External L H L L L X X X H L-H three-state
WRITE Cycle, Begin Burst External L H L L H L X L X L-H D
READ Cycle, Begin Burst External L H L L H L X H L L-H Q
READ Cycle, Begin Burst External L H L L H L X H H L-H three-state
READ Cycle, Continue Burst Next X X X L H H L H L L-H Q
READ Cycle, Continue Burst Next X X X L H H L H H L-H three-state
READ Cycle, Continue Burst Next H X X L X H L H L L-H Q
READ Cycle, Continue Burst Next H X X L X H L H H L-H three-state
WRITE Cycle, Continue Burst Next X X X L H H L L X L-H D
WRITE Cycle, Continue Burst Next H X X L X H L L X L-H D
READ Cycle, Suspend Burst Current X X X L H H H H L L-H Q
READ Cycle, Suspend Burst Current X X X L H H H H H L-H three-state
READ Cycle, Suspend Burst Current H X X L X H H H L L-H Q
READ Cycle, Suspend Burst Current H X X L X H H H H L-H three-state
Notes:
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE
= L when any one or more Byte Write enable signals (BW
A
, BW
B
, BW
C
, BW
D
) and BWE = L or GW = L. WRITE = H when all Byte write enable signals
(BW
A
, BW
B
, BW
C
, BW
D
), BWE, GW = H.
4. The DQ pins are controlled by the current cycle and the
OE
signal.
OE
is asynchronous and is not sampled with the clock.
5. The SRAM always initiates a read cycle when ADSP
asserted, regardless of the state of GW, BWE, or BW
[A:D]
. Writes may occur only on subsequent clocks
after the ADSP
or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle.
6.
OE
is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are three-state when
OE
is
inactive or when the device is deselected, and all data bits behave as output when
OE
is active (LOW)
.

CY7C1347F-133AC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 4.5M PARALLEL 100TQFP
Lifecycle:
New from this manufacturer.
Delivery:
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